DDTB114TU-7-F Allicdata Electronics
Allicdata Part #:

DDTB114TU-7-F-ND

Manufacturer Part#:

DDTB114TU-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTB114TU-7-F datasheetDDTB114TU-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04208
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: DTB114
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar (BJT) transistors are gaining increasing popularity in modern day electronics due to their versatility and ease of use. The DDTB114TU-7-F is an example of a single, pre-biased bipolar transistor that makes use of a variety of features to provide reliable and efficient electrical switching operations on the applications they are employed in. Though they may appear simple in design, they will offer unsurpassed performance when employed in their various application fields.

The DDTB114TU-7-F transistor is well suited be employed in a variety of different types of digital, analog and mixed signal applications. As a pre-biased transistor, the works to match a specific application\'s characteristics to ensure it is running as efficiently as possible. This pre-biased design allows it to operate with minimal voltage switching and power loss, while reducing heat dissipation. The DDTB114TU-7-F is also well suited for data communications and power management applications, making it a versatile and reliable device for any application.

The working principles behind the DDTB114TU-7-F are based off of the classic bipolar transistor structure. This ensures that it will function as expected in any application. At its core is a three layer PN junction, which is the basis for its operation. The base layer is formed by the PN junction and acts as a type of semiconductor allowing it to conduct electrons and holes as required. The middle layer is where the current will flow, and it is what gives the transistor its polarity. The emitter then forms the third layer, causing current to exit and be amplified or controlled as needed. This three layer design allows the transistor\'s current to be manipulated and adjusted as necessary to fit even the most exacting applications.

The DDTB114TU-7-F\'s current control capabilities are further enhanced through its pre-biased design. When a device is pre-biased, it means that the collector impedance has already been adjusted and set to optimize performance. This allows the transistor to receive and transmit as much current as is needed with minimal voltage switching, resulting in greater power efficiency and reduced heat dissipation. It also further extends the transistor\'s useful life.

In conclusion, the DDTB114TU-7-F single, pre-biased transistor is an excellent choice for a variety of digital and analog applications. Its features make it an ideal choice for data management, communications, power management and many other applications. It can also be used in a variety of pre-biased configurations, providing greater power efficiency and life expectancy in any application it is employed in.

The specific data is subject to PDF, and the above content is for reference

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