DDTB123EC-7-F

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The DDTB123EC-7-F is a type of single, pre-biased and bipolar transistor that has a wide range of applications. As a member of the Bipolar (BJT) transistor family, the DDTB123EC-7-F is specifically designed for use in high-voltage switch mode power supplies (SMPS), power operational amplifiers (Op-Amps), hybrid circuits, bipolar switching circuits, and other analog and digital circuits.

The DDTB123EC-7-F is a PNP-type transistor with an emitter-base voltage of up to 11.8V and a current gain of 300 or more. The collector-base voltage is up to 33V and the collector current is up to 2.5A. It also has a maximum power dissipation of 28W with an operating temperature range of -55°C to +125°C.

The DDTB123EC-7-F is characterized by a low power consumption when operated in the range of 0.4 to 10 MHz as well as a high switching speed of up to 8ns. Its fast recovery time and low leakage current make it ideal for high-frequency switching applications.

The DDTB123EC-7-F is designed with several safety features, including a voltage regulator limiting current to reduce the chance of overheating in the event of an overload and a thermal protection circuit to protect against EMI interference. Additionally, the device has a built-in reverse-bias leakage current protection to prevent reverse-biased breakdowns.

The DDTB123EC-7-F\'s working principle is based on the transistor effect, where a micro electric current is used to control the switching of a larger electric current. The transistor consists of three terminals, the emitter, collector, and base, and its current is controlled by a region of lightly doped semiconductor material in the base-collector junction. When the emitter-base channel is forward-biased, the base-collector channel blocks current flow until the base current reaches a certain level at which point a small portion of the base current is amplified and affects the collector current, allowing the larger current to flow.

In summary, the DDTB123EC-7-F is a single, pre-biased and bipolar transistor designed for high-voltage switch mode power supplies, operational amplifiers, hybrid circuits, bipolar switching circuits, and other analog and digital circuits. It boasts a high current gain of 300 or more, a low power consumption when operated in the range of 0.4 to 10 MHz, and a high switching speed of up to 8ns. The device also has several safety features and is based on the transistor effect for operation.

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