Allicdata Part #: | DDTB122JU-7-F-ND |
Manufacturer Part#: |
DDTB122JU-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTB122JU-7-F Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 47 @ 50mA, 5V |
Base Part Number: | DTB122 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Series: | -- |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Resistor - Base (R1): | 220 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DDTB122JU-7-F is a single, pre-biased bipolar junction transistor (BJT). It can be used in amplifying applications and can also operate in switch mode. It is typically used in low-noise amplifier applications, as well as audio amplifiers, radio receivers and transmitters, and many other applications.
The base of the DDTB122JU-7-F is connected to two resistors, a forward bias resistor and a reverse bias resistor, which provide the pre-bias voltage. The base-emitter junction is used in forward bias and the base-collector junction is used in reverse bias.
The main components of the DDTB122JU-7-F BJT are the base, which controls the flow of electrons between collector and emitter, and the emitter and collector. The base can be biased with either positive or negative voltages. A positive base voltage causes the electrons to flow from the base to the collector, resulting in amplification of current. A negative base voltage causes the electrons to flow from the collector to the base, resulting in the cutoff of the current.
The DDTB122JU-7-F is a pre-biased BJT, meaning that its forward bias and reverse bias voltages are preset. The pre-bias voltage of the DDTB122JU-7-F can be adjusted by changing the resistances of the resistors connected to the base, providing flexibility in its applications. The resistors also ensure that the correct bias voltage is maintained at all times, improving the stability of the BJT.
The DDTB122JU-7-F has a low voltage drop between the collector and the emitter when forward bias is applied. This feature is particularly advantageous when the BJT is used in amplifiers, as the low voltage drop results in a higher output voltage, which can be used to produce higher power. Additionally, the DDTB122JU-7-F has a low input capacitor, which reduces distortion and noise in the amplifier.
The DDTB122JU-7-F works by carrying out four different operations when a current flow is applied to the base-emitter junction. These operations are base injection, high current gain, wide forward active mode, and saturation and cutoff. The base injection operation occurs when the current flow is applied to the base-emitter. The high current gain operation results in amplification of the current while the wide forward active mode is used to provide a constant current control. The saturation and cutoff operation are used to control the flow of current.
The DDTB122JU-7-F is a versatile BJT with a range of applications, including audio amplifiers, radio receivers and transmitters, electronic switches, and many more. Its low voltage drop between the collector and the emitter, low input capacitance, adjustable pre-bias voltage, and four operations make it suitable for most applications.
The specific data is subject to PDF, and the above content is for reference
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DDTB123TU-7-F | Diodes Incor... | 0.05 $ | 1000 | TRANS PREBIAS PNP 200MW S... |
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