DDTB122LC-7-F Allicdata Electronics

DDTB122LC-7-F Discrete Semiconductor Products

Allicdata Part #:

DDTB122LC-FDITR-ND

Manufacturer Part#:

DDTB122LC-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTB122LC-7-F datasheetDDTB122LC-7-F Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.03188
6000 +: $ 0.02772
15000 +: $ 0.02356
30000 +: $ 0.02218
75000 +: $ 0.02079
150000 +: $ 0.01802
Stock 3000Can Ship Immediately
$ 0.04
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DTB122
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Series: --
Resistor - Base (R1): 220 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTB122LC-7-F is classified as a single pre-biased bipolar junction transistor (BJT). It is used as a general-purpose low-power amplifying device, capable of switching on and off for a variety of applications. Its main feature is its low parasitic capacitance and wide dynamic range.

A pre-biased BJT is a type of bipolar transistor which has been manufactured so that its collector-base junction is already forward-biased. This means that the transmitter is already partially activated, configured in a ‘on’ state. It offers many advantages over standard BJTs, including a lower power consumption and improved switching speed.

The DDTB122LC-7-F transistor is a PNP type, meaning that its collector and base are both connected to a positive voltage supply. This type of configuration requires two kinds of signals – a base current and a collector voltage. The base current is used to control the flow of electrons from the collector to the emitter, and the collector voltage is used to control the flow of charge carriers from the emitter to the collector.

The DDTB122LC-7-F transistor has an Ic max of 200mA, which means it can handle up to 200mA of current (the maximum allowed current). At around 10mV, the third order intercept point (IIP3) is quite low. This means that the transistor will start to introduce distortion at relatively low levels of input power. It also has a wide dynamic range, meaning it can handle large input power levels without introducing significant levels of distortion.

The DDTB122LC-7-F transistor is used in a variety of applications. Some examples include power amplifiers, voltage regulators, and power control circuits. It can also be used in motor speed control, current sensing circuits, and semiconductor switching circuits.

In conclusion, the DDTB122LC-7-F transistor is a single pre-biased bipolar junction transistor. It is mainly used as an amplifier due to its low power consumption, wide dynamic range, and low distortion level. The DDTB122LC-7-F transistor is ideal for a wide range of applications, from power amplifiers and voltage regulators, to motor speed control and current sensing circuits.

The specific data is subject to PDF, and the above content is for reference

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