Allicdata Part #: | DDTC123JUA-FDITR-ND |
Manufacturer Part#: |
DDTC123JUA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC123JUA-7-F Datasheet/PDF |
Quantity: | 18000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | DDTC123 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC123JUA-7-F transistor belongs to the family of Bipolar Junction Transistors (BJT) and is a single, pre-biased device. It is an improved, high voltage NPN transistor with excellent switching properties, developed for use in a variety of applications. The transistor is designed for operation with high (VCE) Collector-to-Emitter Voltage and can handle up to 200V in its applications.
The DDTC123JUA-7-F transistor is typically used as a switching device in electronic circuits as it is able to conduct current in one direction when given a base current. The transistor is designed to work with high-power switching applications, where a low current base voltage is used to control a higher current and voltage output. By connecting the base and the collector together, the transistor can be pre-biased and the transistor can switch at lower voltages, making it ideal for use with low voltage and power applications such as in wireless communication and other digital circuits.
The working principle of the DDTC123JUA-7-F transistor involves a process called injection. In injection, the base and collector are connected together and then a voltage is applied to the gate terminal. This creates a current from the collector through the base which is then diverted to the substrate, forming a junction between the two. This conversion of the electrical current to heat creates a resistive voltage at the junction, which then acts as a switch, turning the transistor on or off. This switching action is called the "on-off ratio" of the transistor and is measured in amperes (A). This on-off ratio is what makes the DDTC123JUA-7-F transistor an ideal device for high power switching applications.
In addition to its switching capabilities, the DDTC123JUA-7-F transistor can also be used in amplifying applications. This is done by connecting the base to the gate of a step-up transformer and then applying a voltage to the gate. This voltage passes into the collector-emitter junction and is then amplified, allowing for the transistor to amplify signals from low to high levels. The DDTC123JUA-7-F transistor can also be used in circuits where it is necessary to reduce noise in audio systems or other digital applications, as it can provide stability and reduce unwanted noise.
The DDTC123JUA-7-F transistor is an ideal device for a variety of applications, including high-voltage switching, amplification, and noise reduction. Its ability to handle up to 200V, combined with its pre-biased design, makes it a great choice for applications requiring low voltage input and high current and voltage output. This transistor is an excellent choice for applications in wireless communication, digital control, and audio systems, thanks to its high-performance switching capabilities and its ability to reduce noise.
The specific data is subject to PDF, and the above content is for reference
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