Allicdata Part #: | DDTC114YE-FDITR-ND |
Manufacturer Part#: |
DDTC114YE-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC114YE-7-F Datasheet/PDF |
Quantity: | 6000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | DDTC114 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC114YE-7-F, is a single bipolar transistor pre-biased solution manufactured by Diodes Incorporated. This device can be used in a variety of low power, high gain applications ranging from boost converters, LED drivers and audio amplifiers.
The DDTC114YE-7-F is built on a common base design to provide optimum gain and reliability. The NPN transistor chip is internally pre-biased to optimize its performance for symmetrical and low power applications. By incorporating a poly silicon collector, the transistor can handle high current densities and temperatures up to 150° C. Typical applications for the DDTC114YE-7-F include automotive electronics, medical equipment and a variety of consumer and industrial products.
The DDTC114YE-7-F is designed to provide 12V and 18V operating windows with a maximum working voltage of 100V. The peak collector to emitter voltage is 120V and the peak collector current is 200mA with a maximum current gain of 200.
Working Principle
The working principle of a bipolar transistor can be explained as follows. A bipolar transistor is composed of two junctions between three layers of semiconductors: the emitter, the base and the collector. In its simplest form, the transistor acts as a switch that can be turned on or off using the current flowing through its base.
When a small current is applied to the base of the transistor, the current flowing from the emitter to the collector is amplified by the collector current. This is due to the fact that the base current controls the ratio of current flowing through the collector and emitter. By increasing or decreasing the base current, the collector current can be increased or decreased. This property of the transistor is known as gain.
The DDTC114YE-7-F is designed with a collector to emitter saturation voltage of 2V, enabling it to support high power applications. The device also has a maximum working voltage of 100V, and can handle peak collector to emitter voltage of up to 120V.
The DDTC114YE-7-F is used in a variety of applications due to its load driving capabilities, high current density and temperature stability. The device can be used in boost converters, LED drivers, audio amplifiers and other low power, high gain applications in both consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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