DDTC115ECA-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	100 kOhms
Resistor - Emitter Base (R2):	100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	DDTC115

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The DDTC115ECA-7-F is a pre-biased, single-junction, bipolar transistor manufactured by Texas Instruments. It is used in a variety of electronic circuits, including audio amplifiers, medical instrumentation, communications systems, and automotive systems. In this article, we will explore the application field and working principle of the DDTC115ECA-7-F.The DDTC115ECA-7-F is a PNP transistor with a collector-emitter breakdown voltage of 3.2 V and a maximum collector-emitter voltage of 125 V. It is suitable for a wide range of applications, from consumer electronics to high-temperature industrial applications.One of the major advantages of the DDTC115ECA-7-F is that it can be used as a low-power pre-biased drive transistor. This allows it to be used in applications where a low power draw is required. As a pre-biased drive transistor, the DDTC115ECA-7-F has a base-emitter voltage that is already set. This eliminates the need for the user to adjust the transistor every time it is used.The DDTC115ECA-7-F is also a high-speed transistor. It has a low input capacitance, meaning it can switch quickly between different states. This is useful in applications where a rapid response is needed, such as in high-speed communications systems.The DDTC115ECA-7-F is capable of producing high-output current and power. It has a maximum collector-emitter current of 800 mA, and a maximum power dissipation of 1.2 W, allowing for higher circuit power when it is used in a power amplifier.The DDTC115ECA-7-F is a low-noise transistor, allowing for a clean signal in applications such as audio amplifiers. It also has a high level of immunity to electromagnetic interference (EMI). This is important in applications where the transistor is exposed to high levels of EMI, such as in automotive systems.The DDTC115ECA-7-F is an excellent choice for a wide range of applications. It is easy to use, highly reliable, and capable of producing a high level of power and output current. Furthermore, its pre-biased drive allows for a low power draw, and its low-noise capabilities make it suitable for audio amplifiers and other sensitive systems.The working principle of the DDTC115ECA-7-F is based on the bi-directional flow of charge carriers between the collector and the emitter. When a small base-emitter voltage is applied, a small current will flow through the transistor. This current is amplified in the collector, thus producing a larger current as output. This is how the DDTC115ECA-7-F is able to increase and amplify the signal.In conclusion, the DDTC115ECA-7-F is a versatile, pre-biased, single-junction bipolar transistor that is suitable for a wide range of applications, from consumer electronics to high-temperature industrial systems. It is capable of producing high-output current and power and is low-noise, making it suitable for audio amplifiers and other sensitive systems. Furthermore, its pre-biased drive and low input capacitance allow for a rapid response time, making it suitable for high-speed communications systems. The working principle of the DDTC115ECA-7-F is based on the bi-directional flow of charge carriers between the collector and the emitter, allowing it to amplify a current and produce a larger output.

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