DDTC114TUA-7-F Allicdata Electronics
Allicdata Part #:

DDTC114TUA-FDITR-ND

Manufacturer Part#:

DDTC114TUA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC114TUA-7-F datasheetDDTC114TUA-7-F Datasheet/PDF
Quantity: 21000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 21000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: DDTC114
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Series: --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transistors - Bipolar (BJT) - Single, Pre-Biased

The DDTC114TUA-7-F is a popular pre-biased transistor used in a number of applications. This device is a bipolar junction transistor (BJT), which is produced using a die-MOS process using a variation of the standard NPN high-voltage process. It is available as an integrated circuit, or in a discrete package.

General Characteristics

The DDTC114TUA-7-F has a voltage rating of 125 V, with a collector-emitter voltage of -30 V and an emitter-base voltage of -6 V. It has a maximum continuous collector current of 3 A with a power dissipation rating of 4.5 W. The transistor is relatively small and has a package size of 5 mm x 5 mm.

Application Fields

The DDTC114TUA-7-F is a popular choice for pre-biased applications, including amplifiers, high-power switching and power supplies. It is also suitable for a range of other applications, such as switching circuits and integrated circuits.

Working Principle

At its core, the DDTC114TUA-7-F transistor is an NPN device, where the collector and emitter regions are connected to one another via a base region. When the base region is activated with a current, electrons are drawn from the emitter to the collector, creating collector current and thus supplying power to the device.The DDTC114TUA-7-F has a base-emitter voltage (B-E) of -6 V, which is designed to ensure that the device is biased in the forward direction. This means that the transistor can be switched on and off with just a small amount of current, making it ideal for applications requiring low-power switching.The DDTC114TUA-7-F is a popular choice for pre-biased applications, thanks to its high reliability and low cost. It is also suitable for a range of applications, including high-power switching, amplifiers, and power supplies. It is a great choice for both experienced engineers and beginners alike.

The specific data is subject to PDF, and the above content is for reference

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