Allicdata Part #: | DDTC114TUA-FDITR-ND |
Manufacturer Part#: |
DDTC114TUA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC114TUA-7-F Datasheet/PDF |
Quantity: | 21000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDTC114 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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Transistors - Bipolar (BJT) - Single, Pre-Biased
The DDTC114TUA-7-F is a popular pre-biased transistor used in a number of applications. This device is a bipolar junction transistor (BJT), which is produced using a die-MOS process using a variation of the standard NPN high-voltage process. It is available as an integrated circuit, or in a discrete package.General Characteristics
The DDTC114TUA-7-F has a voltage rating of 125 V, with a collector-emitter voltage of -30 V and an emitter-base voltage of -6 V. It has a maximum continuous collector current of 3 A with a power dissipation rating of 4.5 W. The transistor is relatively small and has a package size of 5 mm x 5 mm.Application Fields
The DDTC114TUA-7-F is a popular choice for pre-biased applications, including amplifiers, high-power switching and power supplies. It is also suitable for a range of other applications, such as switching circuits and integrated circuits.Working Principle
At its core, the DDTC114TUA-7-F transistor is an NPN device, where the collector and emitter regions are connected to one another via a base region. When the base region is activated with a current, electrons are drawn from the emitter to the collector, creating collector current and thus supplying power to the device.The DDTC114TUA-7-F has a base-emitter voltage (B-E) of -6 V, which is designed to ensure that the device is biased in the forward direction. This means that the transistor can be switched on and off with just a small amount of current, making it ideal for applications requiring low-power switching.The DDTC114TUA-7-F is a popular choice for pre-biased applications, thanks to its high reliability and low cost. It is also suitable for a range of applications, including high-power switching, amplifiers, and power supplies. It is a great choice for both experienced engineers and beginners alike.The specific data is subject to PDF, and the above content is for reference
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