Allicdata Part #: | 1034DDTC124EUA-7FDITR-ND |
Manufacturer Part#: |
DDTC124EUA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC124EUA-7-F Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Specifications
Resistor - Emitter Base (R2): | 22 kOhms |
Base Part Number: | DDTC124 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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IntroductionThe DDTC124EUA-7-F is a single, pre-biased bipolar junction transistor (BJT). This type of transistor is made from two N-type layers of semiconductor material, with a central P-type layer sandwiched between them. The layers form the three main terminals of the transistor: the collector, the base, and the emitter. It is one of the most widely used transistors, due to its simple construction, and its flexibility in applications.Application FieldThe DDTC124EUA-7-F is commonly used in a wide range of applications, including radio frequency (RF) amplifiers and oscillators, audio amplifiers and other linear circuits, logic drivers and inverters, microprocessor circuit switches, and numerous other applications.When used as an amplifier, the DDTC124EUA-7-F can provide gains of up to 100 times. It is often used as a high-output impedance coupling device. Because of its wide band gain characteristics and high output current capability, it is highly suitable for use in DC power amplifiers. The DDTC124EUA-7-F also finds application in analog and digital circuits, as a driver for logic circuits.Working PrincipleThe DDTC124EUA-7-F operates on the principle of bipolar-junction transistor (BJT) action. When a small current passes through the base terminal of the transistor, it causes a much larger current to flow between the collector and the emitter. This larger current, which is proportional to the base current, is referred to as gain.The DDTC124EUA-7-F operates in three basic modes of operation: cut-off, saturation, and linear. In cut-off mode, no current flows between collector and emitter terminals, despite the presence of a base current. This is because the base-emitter voltage (VBE) is less than the required threshold voltage. In saturation mode, current flows freely between collector and emitter terminals, with almost no voltage drop across the junction. This is because the VBE is greater than the required threshold voltage. In linear mode, the current through the transistor is proportional to the base current, and the voltage drop across the junction is linear. This mode of operation is the most useful, as it allows the DDTC124EUA-7-F to be used in precise application circuits.ConclusionThe DDTC124EUA-7-F is a single, pre-biased bipolar junction transistor (BJT) that is used in a variety of applications, including RF amplifiers and oscillators, audio amplifiers, logic drivers, and inverters. It operates on the principle of BJT action and provides gains of up to 100 times. It is an ideal device for DC power amplifiers and analog and digital circuits because of its wide band gain characteristics and high output current capability.The specific data is subject to PDF, and the above content is for reference
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