Allicdata Part #: | DDTC113ZUA-FDITR-ND |
Manufacturer Part#: |
DDTC113ZUA-7-F |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC113ZUA-7-F Datasheet/PDF |
Quantity: | 9000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.02869 |
6000 +: | $ 0.02495 |
15000 +: | $ 0.02121 |
30000 +: | $ 0.01996 |
75000 +: | $ 0.01871 |
150000 +: | $ 0.01622 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DDTC113 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The Bipolar Junction Transistor (BJT) Single, Pre-Biased, or DDTC113ZUA-7-F is a device which has been designed to provide an easy way for connecting a single transistor to a power supply. This type of transistor has a pair of collectors which are linked to a common base. The collectors are used to drive current through the transistor, while the common base allows the transistor to switch its output voltage levels. This device is able to be used in various different applications, and it is particularly useful for those devices which require a very high frequency. The main advantage of using a BJT Single, Pre-Biased, or DDTC113ZUA-7-F is its ability to limit the power that is dissipated by the transistor.
BJT Single, Pre-Biased, or DDTC113ZUA-7-F is primarily used in high power applications. The collector connected to the base can be used to drive current through the transistor, and this will be determined by the voltage applied across the base. When the voltage applied is more than the breakdown voltage of the collector junction, then the transistor will switch off. This is known as the turn-off voltage. The turn off voltage of the transistor can also be set by adjusting the gate voltage. This gate voltage adjustment is performed through the base pin connection. The voltage of the collector junction also affects the switching characteristics of the transistor.
The working principle of BJT Single, Pre-Biased, or DDTC113ZUA-7-F is based on the utilization of the well-known technique of junction field-effect transistor (JFET). The JFET works by creating an electric field at the junction of the base and collector. As the voltage applied to the base is increased, the electric field becomes stronger, thus producing a higher current flow through the collector junction. This current flow is called the saturation current. As the voltage applied to the base is decreased, the electric field becomes weaker and the collector junction current decreases.
The BJT Single, Pre-Biased, or DDTC113ZUA-7-F has several application fields, such as pulse generator, pulse shaping, power switching, and fast switching applications. It is also used in radio frequency and audio frequency applications. This type of transistor is typically suited for highand medium frequency applications and may be used in the design of audio amplifiers, power supplies, and RF amplifiers. This type of transistor has a more linear transfer characteristic than some other types, and therefore is more suitable for use in digital applications.
The BJT Single, Pre-Biased, or DDTC113ZUA-7-F is a very useful device for many different applications. Its size is small and it offers low power dissipation, which makes it advantageous for applications where it may be required to operate at high frequencies. Additionally, its linear transfer characteristic makes it an ideal choice for analog applications. As with any other device, however, care must be taken to ensure the correct operation and safety requirements are always respected.
The specific data is subject to PDF, and the above content is for reference
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