Allicdata Part #: | DDTC143FCA-FDITR-ND |
Manufacturer Part#: |
DDTC143FCA-7-F |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC143FCA-7-F Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.02550 |
6000 +: | $ 0.02218 |
15000 +: | $ 0.01885 |
30000 +: | $ 0.01774 |
75000 +: | $ 0.01663 |
150000 +: | $ 0.01441 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | DTC143 |
Description
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The DDTC143FCA-7-F is a single bipolar junction transistor (BJT) designed specifically for use in pre-biased applications. It is designed to reduce the supply voltage, thereby reducing power consumption and heat generation. The device is ideal for automating general motor control applications, adjustable speed motor drives and applications utilizing PWM switching.The device is able to provide even greater power and performance than other BJTs thanks to its superior current gain and breakdown voltage ratings. This makes it ideal for use in applications that require pulses of high current, such as power converters and other electronically-controlled industrial equipment.The DDTC143FCA-7-F is based on a specific BJT configuration called an intrinsic-base bipolar transistor. This configuration combines the current gain of a common emitter transistor with the input impedance of a common collector transistor. This makes it well-suited for pre-biased applications where a high input impedance is desired.Because the base of a BJT allows electric current to flow through it when there is a voltage difference between the collector and emitter, the intrinsic-base transistor relies on a voltage drop across the emitter-base barrier to create the necessary input bias current. This allows the device to function properly in applications where a circuit requires a forward voltage drop to be established before the transistor can turn on. The DDTC143FCA-7-F is designed to provide superior performance and reliability in pre-biased applications. It operates in an environment with a constant voltage source and high input impedance, allowing the device to remain on and operate reliably without the need for a separate bias network.The device also provides exceptional power and performance. It offers an excellent power output and current gain, which makes it capable of driving high current loads for pulse-width modulation (PWM) applications. Its superior breakdown voltage ratings also provide superior performance and increased safety in harsh environments.In summary, the DDTC143FCA-7-F is a single bipolar junction transistor (BJT) specifically designed for pre-biased applications. It offers superior current gain and breakdown voltage ratings to make it well-suited for pulse-width modulation (PWM) applications, motor control applications, and other industrial equipment. Its intrinsic-base configuration allows it to remain on without the need for a separate bias network, and its excellent power output makes it capable of driving high current loads.
The specific data is subject to PDF, and the above content is for reference
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