Allicdata Part #: | DDTC142JE-FDITR-ND |
Manufacturer Part#: |
DDTC142JE-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC142JE-7-F Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DTC142 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 470 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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ADDTC142JE-7-F is a single, pre-biased bipolar junction transistor (BJT). It is mainly used in small to medium signal amplification and switching circuits, as well as in low-noise and low-voltage applications. It is also used in DC and AC/DC converters and can be used as a replacement for many of the common NPN or PNP transistors, such as the 2N2222 and 2N2907.
The device is capable of handling various signal processing and communication tasks, including digital and analog processing, sound and video signal buffering, signal mixing, and radio frequency (RF) matching. In addition, it is designed for use in low-side switching applications, such as shutdown and power-on/off control. The DDTC142JE-7-F is also widely used in automotive and consumer electronics.
The DDTC142JE-7-F is built on a special multi-layered ceramic substrate and utilizes a monolithic structure to deliver high-performance capabilities, including low noise and low power consumption. It is fabricated according to a high-performance specification that enables quick startup time and fast switching time. It operates with a collector-base voltage of 8-30V and a collector-emitter voltage of 8-24V.
The working principle of the DDTC142JE-7-F is based on the bipolar mechanism of operation. It has two junctions, one P-N and the other N-P, connected in such a way that when current flows between the two junctions, it creates a voltage drop across them. This voltage drop is sometimes referred to as the “base-emitter” junction voltage or the “collector-base” voltage.
The DDTC142JE-7-F also has an emitter-base junction, which is a diode pre-biased with some bias voltage which keeps the transistor operating in the forward direction. The collector-emitter junction cannot be pre-biased because it operates in the reverse direction and requires high current flow to make it work. The base-emitter junction, however, can be pre-biased with either the “bias” voltage or the “reverse bias” voltage, depending on the device application.
In this way, the DDTC142JE-7-F is capable of responding to small signals and offering current gain. This makes it suitable for a wide range of applications, such as switching, amplification and modulation. Its pre-biased feature also makes it ideal for use in high frequency circuits.
Finally, the DDTC142JE-7-F’s small size and low power consumption make it ideal for use in portable and battery-powered devices. Its excellent performance in low-noise applications makes it suitable for use in sensitive data-processing and communication circuits. Furthermore, its low power requirements and high frequency capabilities make it an excellent choice for use in automotive, medical and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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