Allicdata Part #: | DDTC113ZUADITR-ND |
Manufacturer Part#: |
DDTC113ZUA-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC113ZUA-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 5mA, 5V |
Base Part Number: | DDTC113 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The Single Pre-Biased DDTC113ZUA-7 has a range of applications and various functional processes that make it an invaluable part of engineering and manufacturing. This transistor from Samsung Semiconductor operates in a full range of temperatures from -55 to 150⁰C and PNP established for pre-biasing the collector-base junction. It has a maximum voltage range of 40V, a collector-base voltage range of 40V, a collector-emitter voltage range of 40V, and an emitter-base voltage range of 5V.
At the heart of the DDTC113ZUA-7 is its multi-layered niche design. This integrated circuit utilizes Samsung’s advanced high-voltage process technology to optimize the performance and stability of its high-voltage operation. This optimized performance is designed to provide reliable, high-speed switching, enabling better energy efficiency and a more stable operating environment.
The DDTC113ZUA-7 is usually used in the PNP current-controlled switch for high-speed switching applications such as wire-bonding machines, motor control, and motor drive control. Due to its compact size, the switch has the ability to set high switching speeds with low power consumption and low EMI radiation. It also offers the advantage of being able to operate at high temperature environments.
In terms of its working principle, the DDTC113ZUA-7 operates as an NPN transistor that is composed of two base layers (p-type and n-type) and a collector (emitter) on the bottom layer. In this setup, current is allowed to pass between the two base layers, which directs current into the collector. Through this process, the active region of the transistor is formed, allowing the transistor to function as a switch.
Because of its pre-biased collector-base junction, the DDTC113ZUA-7 allows for higher switching speeds with decreased delay time and improved speed stability. Additionally, pre-biasing this junction reduces switching transients, allowing for better circuit stability and improved performance. The transistor also has a low saturation voltage, which provides improved efficiency when used in low power applications.
The DDTC113ZUA-7 from Samsung Semiconductor is an NPN transistor that offers reliable high-speed switching with improved efficiency. With its pre-biased collector-base junction and optimized performance, this transistor allows for improved stability and performance in a wide range of applications. The DDTC113ZUA-7 is an ideal choice for applications in wire-bonding, motor control and drive control.
The specific data is subject to PDF, and the above content is for reference
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