Allicdata Part #: | DDTC114EKA-7FDITR-ND |
Manufacturer Part#: |
DDTC114EKA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SC59-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC114EKA-7-F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | DDTC114 |
Supplier Device Package: | SC-59-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The DDTC114EKA-7-F is a single, pre-biased, bipolar junction transistor (BJT). It is a kind of semiconductor that forms a junction between two distinct types of semiconductor materials, typically n-type and p-type, for the purpose of creating a current. The DDTC114EKA-7-F utilizes a positive base bias current to allow the collector to source current even without an external base current present. This allows the transistor to be used in applications where the base input is low or absent.
The main application area of the DDTC114EKA-7-F is in audio frequency (AF) amplifiers. This particular transistor is specifically tailored to meet the needs of audio frequency amplifiers in terms of gain, current drive and noise performance. In addition to this, the DDTC114EKA-7-F can be used in other kinds of amplifiers such as low-voltage amplifiers, voltage regulators, and pre-amplifiers.
The pre-bias component of the DDTC114EKA-7-F allows for greater flexibility in amplifier design. This allows for the transistor to be used in applications such as power supply or charging circuits where the base current is low or may not even be present. It is also useful in low voltage applications as the transistor can be driven without external bias.
The working principle of the DDTC114EKA-7-F is based on the combined effects of the electrical and thermal behavior of the components of this transistor. In a simplified model, the collector current of the transistor is established by the combination of the base current and the collector-emitter voltage applied to the transistor. To be more precise, the collector-emitter voltage is typically used to set the DC current gain of the transistor, while the base current sets the gain-bandwidth product of the transistor.
The DDTC114EKA-7-F has a wide-operating temperature range, from -40°C to +125°C, making it ideal for use in high temperature environments. In addition, the transistor also offers good noise performance, both in terms of voltage noise and current noise. The transistor has a single high-frequency breakdown voltage of 15V, giving it a higher voltage capability than many other transistors.
In conclusion, the DDTC114EKA-7-F is an ideal transistor for use in audio frequency (AF) amplifiers, low-voltage amplifiers, voltage regulators, pre-amplifiers and power supply or charging circuits. Its pre-biasing capabilities and wide-operating temperature range make it particularly attractive for use in high-performance, high-temperature applications. The transistor also offers excellent noise performance and has a high-voltage capability.
The specific data is subject to PDF, and the above content is for reference
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