DDTC114GE-7 Allicdata Electronics
Allicdata Part #:

DDTC114GEDITR-ND

Manufacturer Part#:

DDTC114GE-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC114GE-7 datasheetDDTC114GE-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.05530
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: DDTC114
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTC114GE-7 is a single, pre-biased, Bipolar Junction Transistor (BJT). This transistor is able to deliver high levels of performance in a variety of applications. This article will provide an overview of the DDTC114GE-7 transistor, including its application areas and working principle.

Applications

The DDTC114GE-7 is an ideal choice for a variety of applications, particularly those which require high performance. This transistor is particularly suited for use in power management and UPS applications. It is also used in power amplifiers, linear and switching regulators, and low-voltage switching applications. In addition, this transistor can be used in welding and heating applications, such as in welding power supplies and resistive heating elements.

Working Principle

The DDTC114GE-7 is an NPN BJT device, meaning it is composed of three layers of doped silicon separated by a thin layer of oxide. The outer layers, called the emitter and collector, are both negatively charged. In between them lies the base, which has a positive charge. When a voltage is applied between the emitter and the collector, the current that flows through the base will change the voltage between the emitter and collector, allowing a current to flow.

When the transistor is forward-biased, this current then flows from the emitter to the collector, allowing it to deliver a gain. The gain is determined by the current flowing through the base. The higher this current is, the higher the gain will be. This gain can vary from unity to around 100, depending on the type of device used.

The DDTC114GE-7 has a number of advantages that make it attractive for a variety of applications, such as its high gain, low noise, low thermal and junction capacitances, and good thermal stability. Its high gain and low noise make it ideal for audio applications, while its thermal characteristics make it suitable for power applications. Its low junction capacitances also make it suitable for switching applications. In addition, the DDTC114GE-7 has a built-in protection circuit that can prevent thermal damage in case of overcurrent.

Conclusion

In conclusion, the DDTC114GE-7 is an ideal choice for a variety of applications, given the high performance it can deliver. Its wide range of application areas, as well as its thermal, noise, and junction capacitance characteristics, make it a great choice for a variety of applications. Whether used in audio applications or power applications, the DDTC114GE-7 will always be able to deliver the highest possible performance.

The specific data is subject to PDF, and the above content is for reference

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