DDTC114TUA-7 Allicdata Electronics
Allicdata Part #:

DDTC114TUADITR-ND

Manufacturer Part#:

DDTC114TUA-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC114TUA-7 datasheetDDTC114TUA-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: DDTC114
Description

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The DDTC114TUA-7 is a pre-biased single bipolar junction transistor (BJT) which is designed for use in applications requiring high frequency switching and low power loss. It is most commonly used in motor control, power supply, and digital signal processing circuits, but can be used in other applications as well.

The DDTC114TUA-7 is a 40V NPN-type Bipolar Junction Transistor (BJT) with a maximum frequency of 20kHz and a max gain (hfe) of 20V/V. It has an excellent high frequency switching performance, and its power dissipation is low. It is suitable for use in open-loop and closed-loop motoring applications. The DDTC114TUA-7 has a low saturation voltage and low current consumption, making it ideal for low-power circuits.

Electricity flows through the DDTC114TUA-7 by means of its emitter junction, collector junction, and base junction. The emitter junction is negatively charged and releases electrons which are attracted to the positively charged collector junction. The base junction is positively charged and attracts electrons from the emitter junction. This current flow forms a complete circuit between the junctions and allows electricity to flow through the transistor.

The DDTC114TUA-7 is designed to be pre-biased, meaning the base current is already set to a predetermined level for optimal operation. This bias configuration ensures that the Bipolar Junction Transistor performs correctly and efficiently even under low input signal levels. The pre-biased configuration also helps to protect the device from damage in the event of a current overload.

The DDTC114TUA-7 is able to switch rapidly between conducting and non-conducting states, allowing it to be used in high-frequency switching applications. This is made possible by its low saturation voltage and low current consumption. Furthermore, the device\'s excellent current-gain characteristics make it ideal for motor control and digital signal processing applications.

The DDTC114TUA-7 has a wide range of uses, from motor control to power supply circuits, and its pre-biased configuration has many advantages. It is able to switch rapidly and accurately, and its low power consumption helps to keep your circuits running efficiently. Its pre-biased configuration also helps to protect the device from damage in the event of a current overload.

The specific data is subject to PDF, and the above content is for reference

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