Allicdata Part #: | DDTC115GEDITR-ND |
Manufacturer Part#: |
DDTC115GE-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC115GE-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 5mA, 5V |
Base Part Number: | DDTC115 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC115GE-7 is a pre-biased, single bipolar junction transistor (BJT) with a low gate-source capacitance. It is designed to provide reliable performance and to excel in a range of applications requiring high switching speed, high linearity, and low phase noise.
When used in low gate-source switching applications, the DDTC115GE-7 presents excellent linearity performance and is suitable for use in applications where a low gate-source capacitance is desired. When operated with a high gate-source capacitance, the DDTC115GE-7 provides excellent energy efficiency and is recommended for applications where a high switching speed is desired.
The DDTC115GE-7 is designed with a high voltage rating of the collector, which makes it suitable for use in demanding environments that require high voltage operations. The device is also equipped with a temperature sensor that allows for temperature-sensitive operations. Additionally, the device uses an inverted emitter structure that enables high speed operations in low voltage applications.
To ensure reliable performance, the DDTC115GE-7 is designed with an integrated pre-biased functionality. This functionality allows the device to operate in high linearity and low gate-source capacitance, resulting in improved energy efficiency. The pre-biased functionality also ensures that the device performs efficiently even when the gate-source capacitance is high.
In addition to its pre-biased functionality, the DDTC115GE-7 is also equipped with an integrated Darlington amplifier. This amplifier provides high linearity and low distortion performance and is suitable for applications that require fast switching speeds and low energy consumption. The amplifier also allows for precision control over the switching behavior of the device, allowing it to be used for a wide variety of applications that require precise control.
In conclusion, the DDTC115GE-7 is an ideal choice for a variety of applications. Its pre-biased functionality and Darlington amplifier provide excellent linearity and energy efficiency and makes it suitable for use in a wide range of devices and systems. The device is designed to function reliably in a range of conditions, making it suitable for use in demanding environments.
The specific data is subject to PDF, and the above content is for reference
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