Allicdata Part #: | 1034-DDTC122LE-FDITR-ND |
Manufacturer Part#: |
DDTC122LE-7-F |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC122LE-7-F Datasheet/PDF |
Quantity: | 9000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04158 |
6000 +: | $ 0.03742 |
Resistor - Emitter Base (R2): | 10 kOhms |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 220 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC122LE-7-F is a single, pre-biased, N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), manufactured by Diodes Incorporated and which has been designed for an optimized balance between high-speed switching performance, on resistance, breakdown voltage, feature low gate charge and low gate resistance. This device also features superior in-rush current capability which makes it suitable for a wide range of applications.
These devices are available in both unipolar and dual-type packages, and they can be used in both single-ended and complementary topology applications. The DDTC122LE-7-F is designed for use in hard switching circuits such as power inverters, brushless DC (BLDC) motor drives, and uninterruptible power supplies (UPS), as well as for the fast switching of DC-DC converters.
In terms of its characteristics, the DDTC122LE-7-F has a very low on resistance and a high-speed turn-on/off response due to its low gate charge (typical in-rush current of 3.2A/µs and turn-on time of 8.4µs). It also has an excellent ratio between its maximum drain-source breakdown voltage (VDSS), and its maximum drain current (ID), and a drain-source on resistance (RDS(on)) of 0.0065Ω.
In terms of its operation, the DDTC122LE-7-F works in a similar fashion to any other MOSFET, with the gate voltage being used to control the current flow between the drain and source pins. When the gate voltage is high, the MOSFET will turn on (or close) and allow current to flow between the drain and source pins, while when the gate voltage is low, the MOSFET will turn off (or open) and prevent current from flowing between the drain and source pins.
Its pre-biased design allows for better switching performance, and its low gate charge and low gate resistance allow for faster switching times and higher frequencies. It also features a 100V avalanche pulse withstand voltage, which makes it suitable for applications where high voltage spikes may occur.
Due to its robust design, its low on-resistance, and its fast switching times, the DDTC122LE-7-F is considered to be an ideal choice for applications where high efficiency and a low power dissipation is desired. It has also found a variety of uses beyond the scope of the above mentioned applications, such as in automotive battery management systems, industrial control systems, and solar power systems.
The specific data is subject to PDF, and the above content is for reference
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