DDTC122LE-7 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DDTC122LE-7 transistor is a single, pre-biased BJT that is designed and marketed by Toshiba. It is a high-frequency bipolar transistor that is designed for uses in medium-power circuit applications. This transistor is also sold under the part number DTC122LE-7.

The features of the DDTC122LE-7 include a low saturation voltage and a high PNP current gain. The transistor has a collector-base voltage range from -25 to -9 V and a maximum collector-emitter voltage of -8.0 V. The power dissipation of the transistor is up to 1.5 W and the static collector-emitter saturation voltage is 0.25 V with a current gain between 20 and 200. The device is also equipped with a distortion-free high frequency response as well as a low collector-base capacitance.

The DDTC122LE-7 can be used in a wide variety of applications such as high-frequency amplifier circuits and analog switches. The transistor can also be used in systems where a low-noise and low-distortion signal is required. It is suitable for use in applications such as automotive audio systems, television receiver stages, and portable communications.

The working principle of the DDTC122LE-7 can be explained in two parts. The first part is that of the electrical current flow. In this stage, the applied voltage creates a potential difference across the device’s base-emitter junction. This causes a large current to flow through the device’s collector-emitter path and create a voltage across it. This current is then transferred to the load and the voltage is dissipated by the load. This process is responsible for providing the amplification desired.

The second part of the working principle of the DDTC122LE-7 involves the biasing of the transistor. The bias of the transistor is important because it determines the performance of the transistor in terms of current gain and noise level. The biasing is done by either providing external bias voltage or by adding a bias resistor. The bias voltage creates a potential difference between the base and the emitter junctions. In case of a transistor with a pre-biased design, the bias voltage is already present. Pre-biased transistors are useful because they reduce the initial design effort and setup cost.

The DDTC122LE-7 is an extremely versatile transistor that can be used in a wide range of applications. It features a low saturation voltage, high PNP current gain, and distortion-free high frequency response. It is suitable for use in automotive audio systems, television receiver stages, and portable communications. Furthermore, its ability to be pre-biased allows for smoother performance and shorter development times.

The specific data is subject to PDF, and the above content is for reference