Allicdata Part #: | DDTC122LU-FDITR-ND |
Manufacturer Part#: |
DDTC122LU-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC122LU-7-F Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 10mA, 5V |
Base Part Number: | DDTC122 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 220 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors - Bipolar (BJT) - Single, Pre-Biased
The DDTC122LU-7-F is a single, pre-biased bipolar junction transistor (BJT) featuring a wide range of potential applications and power capabilities. Its NPN type package and high current gain capabilities make it a prime consideration for a broad range of uses, from switching functions and power control applications to audio amplification and light-load operation.
Application Field
The DDTC122LU-7-F is intended for use in applications requiring high power as well as fast switching speeds, such as powering motor control circuits, driving audio power amplifiers, and operating switching relays. Additionally, its fast switching speeds and high current capabilities have made it suitable for operating low-power devices such as light emitters, light sensors, and thermoelectric generators. This transistor is also well suited for driving high-capacitance loads such as transformers and capacitors.
The DDTC122LU-7-F is best employed in applications where the load conditions must change quickly and without significant power losses, such as in motor control circuits, where the device is used to vary the speed and/or directions of rotated elements. It is also used in audio power amplifiers, where the current gain capabilities and fast switching speeds make this device the ideal choice for generating a controlled output voltage.
Working Principle
The DDTC122LU-7-F consists of two NPN transistors connected together in a pre-biased configuration. The base-emitter junction of one is always biased on, while the base-emitter junction of the other is bias off. When a positive voltage is applied to the base of the biased-off transistor, it turns on, creating a positive voltage across the collector-emitter junction of the transistor. This voltage is then used to operate the transistor’s load circuit. When the positive voltage is removed, both transistors are turned off, returning the load circuit to its original state.
When operating in switching mode, the DDTC122LU-7-F achieves its fast switching speed by utilizing the current gain of the two NPN transistors. The current gain of the transistors is determined by the ratio of the forward current gain to the reverse current gain. When the base-emitter junction of the lower transistor is biased on, a current gain of up to 20 can be achieved. As a result, the base current of the upper transistor only needs to be 0.5% of that required by the lower transistor to switch the device on.
In other applications, the DDTC122LU-7-F features a high degree of versatility. Its wide operating temperature range of -40°C to +150°C makes it suitable for applications where the devices may be exposed to extreme temperatures. Additionally, its high current gain allows for a wide range of operational possibilities, making this transistor suitable for a wide array of applications.
The DDTC122LU-7-F is a robust and reliable single, pre-biased bipolar junction transistor (BJT) designed for a variety of uses, from switching functions and power control applications to audio amplifiers and light-load operation. It features a wide operating temperature range of -40°C to +150°C and high current gain capabilities, making this transistor a prime consideration for many applications.
The specific data is subject to PDF, and the above content is for reference
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