DDTC123ECA-7 Allicdata Electronics

DDTC123ECA-7 Discrete Semiconductor Products

Allicdata Part #:

DDTC123ECADITR-ND

Manufacturer Part#:

DDTC123ECA-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC123ECA-7 datasheetDDTC123ECA-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Base Part Number: DDTC123
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The DDTC123ECA-7 Bipolar Transistor is a single, pre-biased device designed for use in high speed switching or current amplification circuits. It is a high-efficiency, low-power transistor with a breakdown voltage of 400V and an operating voltage between 10V and 20V. The DDTC123ECA-7 is also suitable for use in low-power applications such as bi-directional switching and current sensing in automotive and telecommunications circuits.

The device consists of one transistor, two field-effect transistors, and two bipolar junction transistors. The transistor is the input terminal and the two field-effect transistors are the output terminals. The second field-effect transistor is used to provide the pre-biased condition. The two BJTs are connected to the transistor in a Cascode configuration to increase the current gain of the device. The device has a maximum current gain of 30 and a gain-bandwidth product of 1.2 kilohertz.

The DDTC123ECA-7 transistor is made using an N-channel enhancement type structure, which allows it to operate at high speed and low power without the need for additional biasing or compensation circuitry. It has a high input impedance and is designed to be immune to capacitive effects, making it suitable for use in RF applications. The device also has internal thermal shutoff protection, which prevents it from overheating under extreme conditions.

The DDTC123ECA-7 transistor is suitable for use in a wide variety of circuits. The device is useful for high speed switching and current amplification, bi-directional switching, current and temperature sensing, automotives and telecommunications applications. The transistor\'s low power consumption, high current gain and wide operating temperature range make it suitable for applications such as amplifiers, converters, oscillators and power management.

The working principle of the DDTC123ECA-7 transistor is relatively simple. When the input signal is applied, the transistor begins to conduct current and voltage across the collector-emitter terminal. The current is amplified by the internal structure of the device and then travels through the output transistors to the load. In this way, the signal is passed along and amplified until it eventually reaches the output. The device also has internal feedback control to ensure that the device is not overloaded and that the signal remains constant over time.

The DDTC123ECA-7 is a versatile and reliable device with a wide range of applications. Its low power consumption and high current gain make it suitable for use in high speed switching and current amplification, bi-directional switching, current and temperature sensing, automotive and telecommunications applications. The device also has internal thermal shutoff protection, making it highly reliable and suitable for use in extreme conditions. The DDTC123ECA-7 transistor is a reliable and efficient device for use in a wide range of circuits.

The specific data is subject to PDF, and the above content is for reference

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