DDTC123EUA-7-F Allicdata Electronics
Allicdata Part #:

DDTC123EUA-FDITR-ND

Manufacturer Part#:

DDTC123EUA-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC123EUA-7-F datasheetDDTC123EUA-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03156
Stock 1000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Base Part Number: DDTC123
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DDTC123EUA-7-F is a single-bipolar-transistor pre-biased (BJT) transistor manufactured by Central Semiconductor Corp. The component is designed to provide a low-cost solution for general-purpose applications. It is particularly well-suited for applications that require high power levels and high voltage operating ranges.

The main features of the DDTC123EUA-7-F include:

  • Maximum peak collector current of 9.5 A
  • Minimum peak collector-emitter voltage of 80 V
  • Collector-emitter breakdown voltage of 99 V
  • Continuous collector current of 800mA
  • Collector-emitter saturation voltage of 2 V
  • Power dissipation of up to 500 mW

The DDTC123EUA-7-F is designed to be a reliable and cost-effective solution for a variety of applications. It is capable of driving large loads, such as relays and motors, and is well-suited for high current and high voltage applications. The component can be used in DC and RF circuits, such as switching and amplifier stages. The pre-biased design allows it to be used in circuits that require minimal bias current.

The DDTC123EUA-7-F is an NPN transistor, meaning that the base is the positive electrode and the collector is the negative electrode. In order for the component to operate properly, the base must be forward-biased (a positive voltage applied to the base relative to the emitter). The transistor acts as a current amplifier, and an increase in the base current produces a proportional increase in the collector current and subsequently the collector output voltage. The gain of the transistor is dependent on the amount of current flowing through the base and is typically calibrated to be between 90 and 800.

The DDTC123EUA-7-F has a high power dissipation ability when compared to similar transistors, and is designed to operate in harsh environmental conditions. The component is constructed using a high-grade guard-ring die design, and has a maximum temperature rating of +150°C. The component is also designed to provide an excellent thermal response, with a high thermal resistance of 2°C/W.

The DDTC123EUA-7-F is a reliable and cost-effective solution for a variety of applications. It is particularly well-suited for applications that require high power levels and high voltage operating ranges. It is capable of driving large loads, such as relays and motors, and is well-suited for high current and high voltage applications. With its excellent thermal response and high power dissipation ability, the DDTC123EUA-7-F is an ideal choice for a variety of general-purpose applications.

The specific data is subject to PDF, and the above content is for reference

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