Allicdata Part #: | DDTC123TE-FDITR-ND |
Manufacturer Part#: |
DDTC123TE-7-F |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC123TE-7-F Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.03985 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDTC123 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DDTC123TE-7-F as a Pre-Biased, Single Bipolar Junction Transistor (BJT) is one of the most versatile and widely used components in the electronics industry. It is an ideal choice for designs that require high power output and wide temperature operating range. The DDTC123TE-7-F comes with a wide range of features and applications, making it one of the most desirable transistors in the market today.
The DDTC123TE-7-F offers a wide selection of features including low voltage operation, electrically isolated base, adjustable operating temperature range and low on-state resistance. The DDTC123TE-7-F can be used in a variety of applications, including high-speed switching, power transistor driver circuits, linear amplifier stages, and class-B motorists. This device is also perfect for medium-power radio frequency and industrial control applications, as well as audio and data converter applications.
The working principle of the DDTC123TE-7-F is simple: when a voltage is applied to the base-emitter junction, it creates a current that flows across the transistor and allows power to pass from the collector to the emitter. When the voltage is reversed, the circuit is cut off and current cannot flow from the collector to the emitter. By controlling the application of the voltage, the amount of current flowing through the transistor can be adjusted. This is the basic principle behind the DDTC123TE-7-F\'s wide range of features and applications.
The DDTC123TE-7-F is an ideal choice for applications where high power output and wide temperature operating range are required. Its low-on-state resistance allows for higher frequency operation, making it ideal for power transistor driver circuits and linear amplifier stages. The electrically isolated base makes this transistor perfect for data converter applications. Its adjustable operating temperature range is important for applications where reliability and optimal performance are required. Additionally, its low voltage operation makes it a great choice for audio and radio frequency applications.
With its wide selection of features and applications, it\'s easy to see why the DDTC123TE-7-F is so popular. This device offers a reliable and versatile platform for many different applications requiring high power output and a wide temperature operating range. Its stability and low on-state resistance make it an ideal choice for a variety of applications. Whether it is used in high-speed switching, power transistor driver circuits, linear amplifiers, or for RF and industrial control applications, the DDTC123TE-7-F offers an unrivaled performance.
The specific data is subject to PDF, and the above content is for reference
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