DDTC123YE-7

Resistor - Emitter Base (R2):	10 kOhms
Base Part Number:	DDTC123
Supplier Device Package:	SOT-523
Package / Case:	SOT-523
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	33 @ 10mA, 5V
Series:	--
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Discontinued at Digi-Key
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

DDTC123YE-7 is a single-prebiased bipolar junction transistor (BJT). A BJT is a type of active semiconductor device that uses a three-terminal configuration and can acts as a switch or amplifier by controlling current flow across the terminals. Pre-biasing is a term used to describe when the transistor is biased, or partially active, prior to being driven by an outside signal. The DDTC123YE-7 was developed for use in medium power general-purpose amplifier applications and features a medium current gain of 450 with a collector-emitter voltage of 20V.

Application Field

The DDTC123YE-7 is designed for general-purpose amplifier applications and is ideal for applications that require medium to high power. The device can be used as a switch or an amplifier, which makes it suitable for a wide variety of applications, including low-noise amplifiers, voltage regulators, oscillators, and transducers. In addition, the DDTC123YE-7 is also suitable for use in radio frequency (RF) amplifiers and in many types of high-speed digital circuits.

Working Principle

The DDTC123YE-7 is a NPN BJT, meaning it is composed of two P-type semiconductors connected by a thin N-type region. This type of BJT has three terminals - the base, the collector, and the emitter - and can amplify current or act as a voltage-controlled switch. When the base is connected to a positive voltage, electrons from the emitter are drawn across the thin N-type region to the collector, which results in a current flowing from the collector to the emitter. The base current controls the current flow between the collector and the emitter, which makes the DDTC123YE-7 a voltage-controlled device.

Conclusion

The DDTC123YE-7 is a single-prebiased NPN BJT that was designed for medium power general-purpose amplifier applications. The device is suitable for use in a variety of medium to high power applications, including low-noise amplifiers, voltage regulators, oscillators, and transducers. The DDTC123YE-7 operates by using a thin N-type layer to control the current flow between its three terminals - the base, the collector, and the emitter - and is thus able to act as a switch or amplifier.

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