Allicdata Part #: | DDTC123YKA-7-F-ND |
Manufacturer Part#: |
DDTC123YKA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SC59-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC123YKA-7-F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 10mA, 5V |
Base Part Number: | DDTC123 |
Supplier Device Package: | SC-59-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The DDTC123YKA-7-F is a single, pre-biased bipolar junction transistor (BJT). It is an NPN device optimized for use in common emitter and common base applications. The DDTC123YKA-7-F is an efficient, cost-effective solution for applications requiring low base current, low collector/base leakage, and low capacitance between collector and emitter. In this article, we will explore the application field and working principle of the DDTC123YKA-7-F.
Applications
The DDTC123YKA-7-F is ideal for a wide variety of applications, including logic circuits, switching applications, amplifiers and drivers, power conversion and control, and more. The pre-biased feature is especially useful for driving larger loads such as motors and solenoids, while the low base current and low collector/base leakage make it well-suited for battery-powered applications. Additionally, the small size of the DDTC123YKA-7-F allows it to be used in small, tight spaces where larger transistors could not fit.
Working Principle
The DDTC123YKA-7-F works like a conventional transistor, with a base, collector, and emitter. When current flows from the base to the emitter, a voltage drop is created, allowing current to flow from the collector to the emitter. This voltage drop can be used to control the current flow from the collector to the emitter. The amount of current that can flow is determined by the current gain, also known as the transistor\'s hFE value. When a voltage is applied to the base, current flows from the base to the emitter, depending on the hFE value. The current flow from the collector to the emitter is then determined by the voltage applied to the base and the hFE value.
The DDTC123YKA-7-F is pre-biased, meaning that the base-emitter voltage is already established during operation. This feature allows for more efficient operation and faster switching speeds compared to other transistors. Additionally, the pre-biased feature significantly reduces the amount of current required to be drawn from the power source.
Conclusion
The DDTC123YKA-7-F is an efficient and cost-effective single, pre-biased bipolar junction transistor (BJT). It is well-suited for applications requiring low base current, low collector/base leakage, and low capacitance between collector and emitter. The pre-biased feature makes the DDTC123YKA-7-F ideal for driving larger loads, such as motors and solenoids, while its small size makes it a perfect choice for tight spaces. The DDTC123YKA-7-F\'s working principle is based on the current gain, or hFE value, of the device, with current flowing from the base to the emitter when a voltage is applied to the base.
The specific data is subject to PDF, and the above content is for reference
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