DDTC123YUA-7-F Allicdata Electronics

DDTC123YUA-7-F Discrete Semiconductor Products

Allicdata Part #:

DDTC123YUA-FDITR-ND

Manufacturer Part#:

DDTC123YUA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC123YUA-7-F datasheetDDTC123YUA-7-F Datasheet/PDF
Quantity: 15000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 15000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DDTC123
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Series: --
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTC123YUA-7-F is a single, pre-biased bipolar junction transistor (BJT). It is designed for use in applications that require high-speed switching up to 10 MHz, good linearity and low signal distortion. Its key features include high current amplification, wide band-width and low on-resistance.

A bipolar junction transistor is a type of electronic device made up of two layers of semiconducting materials, separated by a thin insulator, in this case an oxide layer. The materials used in manufacturing BJTs can be either extrinsic or intrinsic, depending on the desired end result of the device. Extrinsic BJTs are used in applications such as amplifying, switching and digital logic. Intrinsic BJTs are used as sensors in electronic devices, such as thermistors and photoresistors, due to their highly sensitive properties.

The DDTC123YUA-7-F is a single, pre-biased BJT. This means that the doping levels in the N-type and P-type materials used in its construction are already set, giving the user the ability to create a pre-biased device which operates at a specific voltage or current level. This makes the DDTC123YUA-7-F well suited for applications which require efficient and reliable current switching, such as switch-mode power supplies and relays.

The current amplification and wide band-width of the DDTC123YUA-7-F are two major factors which make it suitable for high-speed switching applications. Its high current amplification capability allows the device to switch rapidly and with low switching losses. The wide band-width of the device ensures that it is capable of providing low-distortion signals in the frequency range up to 10 MHz.

The low on-resistance of the DDTC123YUA-7-F is another key feature of the device. This feature is especially important in applications that require high-current switching. The low on-resistance of the DDTC123YUA-7-F makes it capable of supplying a maximum current of up to 10 A.

In addition to offering excellent performance characteristics, the DDTC123YUA-7-F also provides a low-noise output signal. It is designed to produce a low-distortion signal in the presence of high ambient noise levels. This makes the device well suited for use in environments that have a high level of electromagnetic interference, such as mobile communications and industrial environments.

The DDTC123YUA-7-F is an example of a single, pre-biased BJT which is well suited for a variety of applications. Its high current amplification, wide band-width, low on resistance and low-noise output make it ideal for applications that require high-speed switching and low-distortion signals. It is also suitable for use in environments with high levels of electromagnetic interference.

The specific data is subject to PDF, and the above content is for reference

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