DDTC123YUA-7 Allicdata Electronics
Allicdata Part #:

DDTC123YUADITR-ND

Manufacturer Part#:

DDTC123YUA-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC123YUA-7 datasheetDDTC123YUA-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Base Part Number: DDTC123
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A DDTC123YUA-7 is a NPN silicon pre-biased transistor designed for high-speed applications. The device is manufactured in a leaded package for through-hole termination. It has a low on-resistance which makes it suitable for high-current applications. It can withstand reverse voltage of up to 100 volts and is designed for operation up to 150°C.

The pre-biased configurations of this type of transistor allow for quick and easy setup without requiring any additional circuitry. In addition, it also allows for superior performance in various types of electronic circuits, as well as in multiple configurations, such as common-emitter, common-collector, or common-base configurations.

The working principle of any transistor, including the DDTC123YUA-7, is based on the flow of electrons through a semiconductor material, such as silicon. An electron, when subjected to a large electrical field, is capable of “tunnelling” through the material and thereby creating an electric current.

More specifically, the electric current can be induced by applying a voltage between the base–emitter junction of the DDTC123YUA-7. When this voltage is applied, the base-emitter junction starts conducting, allowing electrons to “tunnel” from the emitter and into the base.

At the same time, an opposite current occurs from the collector to the emitter. The amount of current flowing from the collector to the emitter is regulated by the amount of current flowing from the base to the emitter. Thus, this is the way in which the DDTC123YUA-7 amplifies electrical signals.

Due to its unique pre-biased configuration, the DDTC123YUA-7 can be used in a wide range of applications, such as switch-mode power supplies (SMPS), audio amplification, telecommunication, and automotive. In addition to its high-current switching capabilities, the device can also be used to provide precise control of the amplification level of an audio signal.

The DDTC123YUA-7 is also a cost-effective option for high-current applications due to its low on-resistance and its high operational temperature range. In addition, it is also designed for use in harsh environments and it is highly reliable.

In conclusion, the DDTC123YUA-7 is a pre-biased, NPN silicon transistor designed for high-speed applications. It is designed with a low on-resistance, allowing it to be used for high-current applications. Furthermore, it is also capable of providing precise control of the amplification level of an audio signal. The device is also reliable and cost-effective, making it a great option for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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