DDTC143EE-7-F Allicdata Electronics
Allicdata Part #:

DDTC143EE-FDITR-ND

Manufacturer Part#:

DDTC143EE-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC143EE-7-F datasheetDDTC143EE-7-F Datasheet/PDF
Quantity: 6000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 6000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 4.7 kOhms
Base Part Number: DTC143
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTC143EE-7-F is a pre-biased version of the popular DDTC143EE-7, which is a single-transistor bipolar junction transistor (BJT). It is designed for use in a variety of industrial, commercial, and consumer applications.

The DDTC143EE-7-F is a NPN, silicon-based unit built with a medium power rating. It is designed to be used in audio amplifiers, switching power supplies, and low voltage applications. It is also suitable for use in analog and digital circuits.

The DDTC143EE-7-F has a maximum collector-emitter voltage of 30 volts, so it can be used in higher voltage applications. It also has a nominal current gain of 50, a maximum collector-base current of 200 milliamps and a maximum collector-emitter saturation current of 2 amps. The DDTC143EE-7-F is rated for a maximum power dissipation of 1 watt.

The working principle of the DDTC143EE-7-F is simple. A current is applied to the base of the transistor; this current is amplified and then passed on to the collector. The collector and the emitter provide the output voltage of the circuit. Depending on the base current, the transistor will either be in a cut-off state, a linear state, or an active state. When the transistor is in a cut-off state, the current is not amplified and the output voltage is equal to VCE, the collector-emitter voltage.

When the transistor is in linear state, the current is amplified but not quite to the full saturation point. The output voltage is below VCE, but the current gain is still high enough to provide ample power to drive a load. In the active state, the current is amplified to its full saturation point. The output voltage is equal to or less than VCE but the current gain is very high.

The DDTC143EE-7-F also features pre-biased operation. This means that the base current is already provided, so the only thing left to do to get the circuit going is to start applying current to the collector. This makes the DDTC143EE-7-F an ideal choice for applications where a quick response time is required, such as switches and timers.

The DDTC143EE-7-F\'s pre-biased operation also makes for an easy setup process. It can be wired up quickly and easily and is relatively inexpensive compared to other pre-biased transistors. It is a great choice for those looking for a cost-effective and reliable solution.

In sum, the DDTC143EE-7-F is a single-transistor bipolar junction transistor designed to provide cost-effective solutions in a variety of applications. It is rated for a maximum collector-emitter voltage of 30 volts, has a nominal current gain of 50, and a maximum collector-base current of 200 mA. The DDTC143EE-7-F provides pre-biased operation, allowing for easy setup and precise operation. It’s also suitable for audio amplifiers, switching power supplies, and low voltage applications.

The specific data is subject to PDF, and the above content is for reference

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