DDTC144TUA-7-F Allicdata Electronics
Allicdata Part #:

DDTC144TUA-FDITR-ND

Manufacturer Part#:

DDTC144TUA-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC144TUA-7-F datasheetDDTC144TUA-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03156
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: DDTC144
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DDTC144TUA-7-F is a classified single, pre-biased transistor falling under the category of bipolar junction transistors (BJT). A transistor is a semiconductor component used for electronic switches and amplifiers, which enables a non-direct electrical current to pass through the device. Single and pre-biased transistors have specific application fields and working principles because of their unique electro-mechanical structures.

The DDTC144TUA-7-F is primarily used in motion control and robotics, providing reliable performance even under extreme conditions where temperature and humidity levels can change rapidly. It also finds application in consumer products, generally as a switch or amplifier component in devices such as hair trimmers, blenders and speakers.

The structure and working of the DDTC144TUA-7-F are based on the concepts of capacitance and inductance. The device comprises three terminals: the collector (C), base (B) and emitter (E). It is manufactured with a semiconducting material, usually silicon. The presence of a semiconductor material provides the DDTC144TUA-7-F with appropriate conductivity characteristics, allowing a current to move through the device.

The charge carriers, which are typically electrons, travel from the emitter to the collector, thus creating a small electric field in between. This electric field modulates the current flow, which can be controlled by adjusting the emitter-base voltage, number of charge carriers in the base, and the concentration of impurities. The electric field is responsible for the amplification of signals, which generates a significant amount of power. The amplification of signals makes it possible to drive heavy loads, making it ideal for use in industrial applications.

The DDTC144TUA-7-F also features thermal management capabilities, which prevent the device from overheating, reducing the risk of damage due to excess heat. Heat build-up, which can reduce the device’s efficiency, is efficiently dispersed by a built-in temperature sensor.

The device also features low power consumption, which adds to its efficiency and helps to maintain the device’s optimal performance for more extended periods.

A major factor that makes the DDTC144TUA-7-F a popular choice among engineers and technicians alike, is its compact size, which allows the device to fit into small spaces. This feature can be very beneficial when designing circuitry, as it simplifies the process of connecting the various components.

In conclusion, the DDTC144TUA-7-F is an efficient bipolar junction transistor (BJT) due to its ability to provide a reliable performance under tough conditions, thermal management capabilities, low power consumption, and a compact size. Its ability to amplify signals makes it ideal for use in motion control, robotics, and consumer products.

The specific data is subject to PDF, and the above content is for reference

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