Allicdata Part #: | DMN3016LDN-13-ND |
Manufacturer Part#: |
DMN3016LDN-13 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2 N-CH 9.2A VDFN3030-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 9.2A (Ta) Surfac... |
DataSheet: | DMN3016LDN-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.11737 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Current - Continuous Drain (Id) @ 25°C: | 9.2A (Ta) |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1415pF @ 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | V-DFN3030-8 (Type J) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMN3016LDN-13 is a highly reliable and cost-effective four-way N-channel power MOSFET array with a total gate charge of 0.3 μC. It can be used for high-frequency and rugged applications that require high reliability and low power consumption.
The DMN3016LDN-13 is a suitable solution for use in applications such as drives, switchers, amplifiers, power supplies, and power management in medical and telecom products. The array is specially designed to offer fast switching and low on-resistance while providing superior ESD and latch-up performance. The array has an integrated body diode and a low gate drive power to match the regulation needs of various applications.
The DMN3016LDN-13 is an ideal solution in situations where an array of four individual logic level N-channel MOSFETs is needed. The device can operate efficiently over a range of voltages, temperatures and frequencies. The low on-resistance and low leakage current helps to ensure high efficiency and excellent power management. The integrated body diode also has a wide tolerance for reverse polarity and helps reduce power losses due to reverse current flow.
The working principle of the DMN3016LDN-13 is fairly simple. It consists of four N-channel MOSFETs, each of which has a gate connected to the control signal, a source connected to the ground, and a drain connected to the output signal. When the gate receives a control signal, the MOSFET switches on, allowing current to flow between the gate and the drain. This current causes the drain to go positive, and the positive voltage is ultimately the output signal. When the control signal is removed, the gate no longer receives a signal and the drain is no longer able to be pulled up, so the output signal returns to its original state.
The DMN3016LDN-13 offers many advantages for electronic applications including fast switching, low on-resistance, low power consumption, low leakage current, and superior ESD and latch-up performance. It is an ideal solution for applications requiring a reliable and cost-effective way to switch and regulate power.
The specific data is subject to PDF, and the above content is for reference
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