| Allicdata Part #: | DMN3016LFDE-13DITR-ND |
| Manufacturer Part#: |
DMN3016LFDE-13 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 30V U-DFN2020-6 |
| More Detail: | N-Channel 30V 10A (Ta) 730mW (Ta) Surface Mount U-... |
| DataSheet: | DMN3016LFDE-13 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 6-UDFN Exposed Pad |
| Supplier Device Package: | U-DFN2020-6 (Type E) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 730mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1415pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25.1nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMN3016LFDE-13 is a N-Channel Enhancement Mode MOSFET which is suitable for switching and amplification applications. This product utilizes the advanced SIPMOS technology which provides excellent on-state performance as well as fast switching speed of up to 35V. It is also RoHS compliant and is an ideal choice for automotive, industrial, and consumer applications.
The DMN3016LFDE-13 has a wide range of applications. It can be used in power conversion, load switching, and motor control. In addition, it is also suitable for applications in consumer electronics, automotive, lighting and home appliance electronics. It can also be used in power converters and motor drivers, as well as in industrial applications such as welding and machine tools.
The working principle of the DMN3016LFDE-13 is based on the fact that it can be used as an enhancement mode MOSFET. It has an active region, which is composed of an N-type and P-type region. The N-type region has majority carriers which are electrons, and the P-type region has majority carriers which are holes. When a positive gate source voltage, or VGS is applied to the device, it creates a conductive path between the source and drain. This in turn allows current to flow through the device, and this is known as an enhancement-mode MOSFET.
The DMN3016LFDE-13 features a higher drain current than the commonly available MOSFETs. This is due to its optimized package design and the reduced number of required active pins. Furthermore, the DMN3016LFDE-13 offers an improved on-state performance, as well as a better electrostatic discharge protection. On top of that, it features an improved thermal resistance compared to other devices.
In conclusion, the DMN3016LFDE-13 is an ideal choice for switching and amplification applications. It is highly reliable and offers excellent performance in terms of on-state characteristics, fast switching speed, and electrostatic discharge protection. Furthermore, the reduced package design allows for better thermal resistance and higher drain current.
The specific data is subject to PDF, and the above content is for reference
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DMN3016LFDE-13 Datasheet/PDF