DMN3065LW-13 Discrete Semiconductor Products

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The DMN3065LW-13 is a N-channel MOSFET of the 3065LW series. It is a Low Body Source Drain three terminal switch-mode MOSFET. It is particularly suited for power supply and DC-DC converter applications. It is built with a high temperature superjunction MOSFET technology, coined Deep Trench MOSFET, which provides superior switching performance.

The MOSFET has very low On-resistance and very low gate-charge characteristics. It has an avalanche energy rating of 55mJ, making it suitable for applications that feature high dv/dt pulses near Turn On. It also has an operating temperature range of -55°C to 175°C, a maximum gate threshold voltage of 4V max and a maximum drain-source voltage of 30V max.

The DMN3065LW-13 MOSFET has very low On-resistance and very low gate-charge characteristics. It is well suited for high-side switch, DC to DC conversion, improved efficiency applications, and other high power battery charging systems. The MOSFET is designed to enable high current capability with low ON resistance for low voltage applications, such as those encountered in power supply and dc-dc converter designs.

The MOSFET is an ideal switch mode power supply component and can handle currents up to 2.6A and voltages up to 100V, with a typical switching time of 35ns. The low gate-charge of DMN3065LW-13 enables fast and reliable operation with low power dissipation, making it an excellent choice in systems where space and power are of the essence. Additionally, the device has a very low propagation delay and low output capacitance.

The working principle of a MOSFET is the same as that of a transistor. A MOSFET is a type of transistor that utilizes the flow of electrons across a channel between the two gate electrodes. When a voltage is applied to the gate, the resistance of the channel between the two gate electrodes changes. This change in resistance is responsible for the switching action of the MOSFET. The higher the voltage applied to the gate, the lower the resistance of the channel and the more current that can flow across it.

The DMN3065LW-13 is an ideal device for switching power at high speed and in high power applications. Its low gate-charge, low on resistance, and fast switching time make it ideal for switching heavy loads. The device’s low power dissipation and avalanche energy rating makes it suitable for use in applications subject to high dv/dt pulses. It is the perfect choice for medium to high current applications.

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