Allicdata Part #: | DMN3025LFDF-13-ND |
Manufacturer Part#: |
DMN3025LFDF-13 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 9.9A UDFN2020-6 |
More Detail: | N-Channel 30V 9.9A (Ta) 2.1W (Ta) Surface Mount U-... |
DataSheet: | DMN3025LFDF-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.08667 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 641pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20.5 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN3025LFDF-13 is an enhancement mode MOSFET which, when switched on, will provide a high current path between its source and drain terminals. It is a powerful switching device that is often used as a blocking element or as a regulator in both digital and analog circuits.
This MOSFET is designed to be primarily used in applications that require low voltage operation to provide high current flow. These include power supply conversion and power control for motors, inductive loads, and switching regulators. Being a 30V rated device, it can effectively handle currents up to 28A which is far beyond what an equivalent BJT transistor is capable of. Furthermore, the MOSFET\'s fast switching time makes it suitable for high speed switching applications.
The DMN3025LFDF-13 MOSFET is also used in communications electronics, automotive systems and power management applications such as DC/DC converters, class D amplifiers, and more. Its fast switching speed, low threshold voltage and low power dissipation make it an ideal choice for these applications.
In terms of working principle, the DMN3025LFDF-13 operates much like any other enhancement mode MOSFET. It is triggered on by applying a voltage to its gate terminal, which creates an electric field that attracts electrons from the source to the drain. This phenomenon creates a conductive path between source and drain, allowing the current to flow. The amount of current that can flow through this path is determined by the MOSFET\'s channel resistance.
For the DMN3025LFDF-13, its channel resistance is very low which is why it is able to handle larger current loads than some other MOSFETs. This also makes it a good choice for applications that require both high current and high speed such as motor control. Furthermore, the device is able to operate at higher frequencies compared to lower power MOSFETs, making it suitable for switching applications.
The DMN3025LFDF-13 is designed to be used in both low and high voltage applications, making it a highly versatile MOSFET. With its high power handling capabilities, fast switching speed and low on-resistance, it is well suited for a wide variety of different applications. The device can be found in various power supplies, motor control systems, automotive electronics, and many more.
The specific data is subject to PDF, and the above content is for reference
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