DMN3018SFG-13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMN3018SFG-13 is an N-channel depletion enclosure-gate field-effect transistor (FET). The field-effect transistor is a semiconductor device that controls current flow. It has two semiconductor layers, which are a gate and a channel, separated by an insulating material; this insulating material is typically silicon dioxide. The device can switch between on and off states, resulting in a high-number of switching cycles.

The DMN3018SFG-13 is a subminiature FET offering fast switching and controllable on and off resistance. It can be used in a wide variety of applications, from audio amplifiers to input signal relays, due to its low power consumption and excellent switching capability. The device is particularly well suited for use in circuits requiring high speed and low on resistance. It is also suitable for applications that require high voltage, current and power levels.

The DMN3018SFG-13 has an excellent balance of power performance and cost. The device is well-suited for integration into existing designs, compared to other comparable FETs. It also offers excellent switching speeds, as low as 15 nanoseconds. Additionally, the device can handle a maximum current of up to 3.5 Amps.

The device operates by the principle of field effect. Electrons are produced when a voltage is applied to the gate terminal. The electrons flow through the channel, controlled by the field effects of the applied voltage. The depletion region formed by the gates prevents current flow in the reverse direction. As the electric field increases or decreases, the size of the depletion region is adjusted, allowing current flow in one direction.

The DMN3018SFG-13 can be used in a variety of applications. It is suitable for use in power supply circuits, audio amplifiers, input signal relays, and voltage control circuits. It can be used to control current and voltage, and has a wide range of frequencies. It is also ideal for switching high power and low on resistance, which makes it suitable for many industrial and consumer applications.

In conclusion, the DMN3018SFG-13 is an N-channel depletion enclosure-gate field-effect transistor with excellent balance of power performance and cost. The device is suitable for a wide range of applications, from power supply circuits to audio amplifiers. Its excellent switching speed and low on resistance makes it well suited for high power and current applications, as well as high voltage and frequency control. The working principle of the device is based on the field effect, which results in an adjustable depletion region that allows current to flow in one direction.

The specific data is subject to PDF, and the above content is for reference