DMN3016LDV-7 Allicdata Electronics
Allicdata Part #:

DMN3016LDV-7-ND

Manufacturer Part#:

DMN3016LDV-7

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2 N-CH 21A POWERDI3333-8
More Detail: Mosfet Array 2 N-Channel (Dual) 21A (Tc) Surface...
DataSheet: DMN3016LDV-7 datasheetDMN3016LDV-7 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.16745
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Description

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The DMN3016LDV-7 is a Dual N-Channel Enhancement Mode Vertical MOSFET Array with a 20-V VDS rating and RDS(on) of 0.12 Ohms. This MOSFET is suitable for a wide array of applications in various markets. This article will discuss the applications and working principles of the DMN3016LDV-7 in further detail.

Applications

The DMN3016LDV-7 offers a variety of applications. In the consumer electronics markets, it is used in voltage switch adaptors, features low on resistance in a very small space and efficient designs. In the telecom sector, SDH, SONET and other switch equipment is also utilizing this device. Moreover, the DMN3016LDV-7 is also applied in industrial and automotive equipment such as PWM inverters, motor drivers, HVAC equipment, power line carriers and hybrid electric vehicles.

Working Principle

The DMN3016LDV-7 is an N-Channel DMOS FET array; it integrates two power MOSFETs in a single package. The operating principle of a MOSFET is based on an electric field acting on the semiconductor, which controls conduction. The DMN3016LDV-7 uses vertical DMOS (VDMOS) process, which means that the MOSFETs are fabricated in pairs instead of individually. This makes the device fast and efficient. The device has a 20-V VDs rating, a 0.12 Ohms RDS(on) and a fast switching speed of 13.3ns. This makes it suitable for high current, high power applications.

The specific data is subject to PDF, and the above content is for reference

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