
Allicdata Part #: | DMN3016LDV-7-ND |
Manufacturer Part#: |
DMN3016LDV-7 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2 N-CH 21A POWERDI3333-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 21A (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
2000 +: | $ 0.16745 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1184pF @ 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerDI3333-8 |
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The DMN3016LDV-7 is a Dual N-Channel Enhancement Mode Vertical MOSFET Array with a 20-V VDS rating and RDS(on) of 0.12 Ohms. This MOSFET is suitable for a wide array of applications in various markets. This article will discuss the applications and working principles of the DMN3016LDV-7 in further detail.
Applications
The DMN3016LDV-7 offers a variety of applications. In the consumer electronics markets, it is used in voltage switch adaptors, features low on resistance in a very small space and efficient designs. In the telecom sector, SDH, SONET and other switch equipment is also utilizing this device. Moreover, the DMN3016LDV-7 is also applied in industrial and automotive equipment such as PWM inverters, motor drivers, HVAC equipment, power line carriers and hybrid electric vehicles.
Working Principle
The DMN3016LDV-7 is an N-Channel DMOS FET array; it integrates two power MOSFETs in a single package. The operating principle of a MOSFET is based on an electric field acting on the semiconductor, which controls conduction. The DMN3016LDV-7 uses vertical DMOS (VDMOS) process, which means that the MOSFETs are fabricated in pairs instead of individually. This makes the device fast and efficient. The device has a 20-V VDs rating, a 0.12 Ohms RDS(on) and a fast switching speed of 13.3ns. This makes it suitable for high current, high power applications.
The specific data is subject to PDF, and the above content is for reference
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