DMN3018SFGQ-13 Allicdata Electronics
Allicdata Part #:

DMN3018SFGQ-13-ND

Manufacturer Part#:

DMN3018SFGQ-13

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NCH 30V 8.5A POWERDI
More Detail: N-Channel 30V 8.5A (Ta) 1W (Ta) Surface Mount Powe...
DataSheet: DMN3018SFGQ-13 datasheetDMN3018SFGQ-13 Datasheet/PDF
Quantity: 1000
1 +: $ 0.13000
10 +: $ 0.12610
100 +: $ 0.12350
1000 +: $ 0.12090
10000 +: $ 0.11700
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN3018SFGQ-13 is a single N-Channel Enhancement Mode Field-Effect Transistor (FET) designed for switching and amplifier applications. This device is a versatile and robust digital logic n-channel MOSFET optimized for low to moderate power applications and highly virtualized applications which require circuit protection, minimal gate charge and low on-state resistance.

The DMN3018SFGQ-13 FET operates in low to moderate power applications such as micro-controllers, Flash EEPROM, CCTV systems, communication systems, power supplies, and various automotive applications. It provides reliable, low current ESD protection from the gate to source potential. It also features an integrated active gate resistor that reduces the gate current and minimizes dependence on load current and temperature.

The design of this FET enables it to provide a low on-state resistance, improved switching capabilities and an optimized trade-off between gate charge and drive characteristics. Additionally, its integrated thermal stability allows for rugged and reliable operation in harsh ambient conditions. Its wide voltage and temperature ratings are also suitable for use in military, industrial, and other demanding applications.

The DMN3018SFGQ-13 FET works in the depletion mode and has negative voltage. It operates on the principle of a MOSFET ( Metal-Oxide-Semiconductor Field Effect Transistor). When a negative voltage is applied to its gate, it turns on, allowing current to flow through its channel. When the voltage is removed, the FET turns off and the channel closes. In this way, the voltage is used to control the current. The data sheet provided by the manufacturer should always be referred to for information on applications, ratings, and related specifications.

The DMN3018SFGQ-13 FET is an important component in many commercial and industrial applications. In communications, it can be used as an amplifier or as a switch for routing signals and data. In power supplies, it can be used as a power switch to turn DC voltage on and off. In automotive applications, it can be used for switching between various equipment, controlling signals, or enhancing power factor in electrical power systems. In medical micro-electronic devices, it can be used for switching low voltage current between various components.

It is important to note that the ratings and parameters of the DMN3018SFGQ-13 transistor need to be carefully checked before it is used in an application. This FET can be used in a variety of switching and amplifier applications, but it is important to understand its ratings, specifications and tolerance before using it. It is always important to refer to the data sheet published by the manufacturer before use.

The specific data is subject to PDF, and the above content is for reference

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