DMN3025LFG-13 Allicdata Electronics
Allicdata Part #:

DMN3025LFG-13DITR-ND

Manufacturer Part#:

DMN3025LFG-13

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 7.5A POWERDI
More Detail: N-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount Powe...
DataSheet: DMN3025LFG-13 datasheetDMN3025LFG-13 Datasheet/PDF
Quantity: 1000
1 +: $ 0.14000
10 +: $ 0.13580
100 +: $ 0.13300
1000 +: $ 0.13020
10000 +: $ 0.12600
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN3025LFG-13 is a single N Channel Mosfet with an exceptionally low on-resistance, which makes it suitable for a range of applications, from general switching to high-current switching, making it a versatile tool for engineers. This document outlines the application field, working principle and other pertinent information of the DMN3025LFG-13.

Application Field

The low on-resistance of the DMN3025LFG-13 makes it ideal for applications where very low voltage losses are desired, such as in high current switching applications. The DMN3025LFG-13 can handle up to 20 Amps of current and a voltage rating of 30 Volts. This makes it suitable for switching motor drivers or other high power applications as well as low power applications. The DMN3025LFG-13 is also available with a wide range of gate configurations, including logic level gate voltage and a small gate charge, making it suitable for a range of applications. Additionally, the DMN3025LFG-13 is packaged in a TO-220 case, which is easy to mount and use.

Working Principle

The DMN3025LFG-13 is based on a MOSFET structure, specifically an N-Channel MOSFET. MOSFETs are three-terminal devices which allow current to flow between the drain and source terminals when a voltage is applied to the gate. This increases the conductivity between the source and the drain, resulting in very low on-resistance. In the case of the DMN3025LFG-13, the on-resistance is only 25mOhms. The MOSFET is controlled by a gate voltage, which when high, switches the DMN3025LFG-13 on, and when low, switches it off. The gate voltage is determined by the voltage applied to the gate terminal.

Other Features

The DMN3025LFG-13 also features a number of other features, including ESD protection and over-current protection. ESD protection prevents damage from electrostatic discharges, which can cause catastrophic failure in other devices. The DMN3025LFG-13 has an ESD protection up to 2KV. Over-current protection prevents the device from being damaged by excessively high currents, ensuring that the device will keep functioning correctly even in the event of an over-current event. Finally, the DMN3025LFG-13 is certified for use in automotive and industrial applications, contributing to its suitability for use in a number of applications.

Conclusion

The DMN3025LFG-13 is an extremely versatile device, with an exceptionally low on-resistance and a range of features that make it suitable for a variety of applications. With its low-voltage losses and low-power operation, it is suitable for both high- and low-power switching applications, as well as automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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