| Allicdata Part #: | DMN3025LFG-13DITR-ND |
| Manufacturer Part#: |
DMN3025LFG-13 |
| Price: | $ 0.14 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 30V 7.5A POWERDI |
| More Detail: | N-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount Powe... |
| DataSheet: | DMN3025LFG-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.14000 |
| 10 +: | $ 0.13580 |
| 100 +: | $ 0.13300 |
| 1000 +: | $ 0.13020 |
| 10000 +: | $ 0.12600 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | PowerDI3333-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 605pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 11.6nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 18 mOhm @ 7.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMN3025LFG-13 is a single N Channel Mosfet with an exceptionally low on-resistance, which makes it suitable for a range of applications, from general switching to high-current switching, making it a versatile tool for engineers. This document outlines the application field, working principle and other pertinent information of the DMN3025LFG-13.
Application Field
The low on-resistance of the DMN3025LFG-13 makes it ideal for applications where very low voltage losses are desired, such as in high current switching applications. The DMN3025LFG-13 can handle up to 20 Amps of current and a voltage rating of 30 Volts. This makes it suitable for switching motor drivers or other high power applications as well as low power applications. The DMN3025LFG-13 is also available with a wide range of gate configurations, including logic level gate voltage and a small gate charge, making it suitable for a range of applications. Additionally, the DMN3025LFG-13 is packaged in a TO-220 case, which is easy to mount and use.
Working Principle
The DMN3025LFG-13 is based on a MOSFET structure, specifically an N-Channel MOSFET. MOSFETs are three-terminal devices which allow current to flow between the drain and source terminals when a voltage is applied to the gate. This increases the conductivity between the source and the drain, resulting in very low on-resistance. In the case of the DMN3025LFG-13, the on-resistance is only 25mOhms. The MOSFET is controlled by a gate voltage, which when high, switches the DMN3025LFG-13 on, and when low, switches it off. The gate voltage is determined by the voltage applied to the gate terminal.
Other Features
The DMN3025LFG-13 also features a number of other features, including ESD protection and over-current protection. ESD protection prevents damage from electrostatic discharges, which can cause catastrophic failure in other devices. The DMN3025LFG-13 has an ESD protection up to 2KV. Over-current protection prevents the device from being damaged by excessively high currents, ensuring that the device will keep functioning correctly even in the event of an over-current event. Finally, the DMN3025LFG-13 is certified for use in automotive and industrial applications, contributing to its suitability for use in a number of applications.
Conclusion
The DMN3025LFG-13 is an extremely versatile device, with an exceptionally low on-resistance and a range of features that make it suitable for a variety of applications. With its low-voltage losses and low-power operation, it is suitable for both high- and low-power switching applications, as well as automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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DMN3025LFG-13 Datasheet/PDF