| Allicdata Part #: | DMN3020UTS-13DITR-ND |
| Manufacturer Part#: |
DMN3020UTS-13 |
| Price: | $ 0.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 30V 15A 8-TSSOP |
| More Detail: | N-Channel 30V 15A (Tc) 1.4W (Ta) Surface Mount 8-T... |
| DataSheet: | DMN3020UTS-13 Datasheet/PDF |
| Quantity: | 2500 |
| 1 +: | $ 0.15000 |
| 10 +: | $ 0.14550 |
| 100 +: | $ 0.14250 |
| 1000 +: | $ 0.13950 |
| 10000 +: | $ 0.13500 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-TSSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.4W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1304pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 8V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 4.5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMN3020UTS-13 is a single type MOSFET (metal-oxide-semiconductor field-effect transistor) that is popular for its high power handling ability, high speed switching, and wide range of applications and control options. The S indicates that the DMN3020 has an ESD( electrostatic discharge) protective diode integrated into the transistor to increase its robustness.
The DMN3020UTS-13 is mainly used in applications requiring high power handling. It has an operating voltage range between 0 V and 20 V, which gives designers plenty of options for providing power to a wide range of electronic devices. It has a maximum drain current of 30 A and a maximum power rating of 700 W. This makes it ideal for powering large motors, lighting systems, and other heavy-duty electromechanical systems.
The DMN3020UTS-13 also offers a high speed switching capability due to its low gate capacitance. This reduced gate capacitance allows it to handle switching frequencies up to 400 KHz, making it ideal for high frequency applications such as pulse motor control, microprocessor power supply design, and switching power supplies.
The DMN3020UTS-13 also offers a wide range of control options. It has a breakdown voltage of 16 V (Id=3mA, Vgs=0V) and can be driven with either a +5V gate-source voltage (Vgs) to turn it on, or with a -5V Vgs to turn it off. It also has a low VGS(th) threshold of only 2 V, which allows it to be used in a wide range of applications, including high speed switching, high power motor control, and low voltage control.
The DMN3020UTS-13 can also be used in applications requiring storage of large amounts of energy, such as for power regulation and for buffering large and continuous currents. This can be due to its extremely low on-state resistance, which is only 0.012Ω at 10 V and 10A. The DMN3020UTS-13 also features a strong avalanche capability and a very low gate charge for improved power efficiency.
In summary, the DMN3020UTS-13 is an ideal choice for applications requiring a high power handling, high speed switching, and a wide range of control options. It has an operating voltage range of 0V to 20V, a maximum drain current of 30A, a maximum power rating of 700W, and a low VGS(th) of only 2V. Its low on-state resistance and strong avalanche capability also make it well-suited for applications requiring energy storage, power regulation and buffering of large and continuous currents. With its integrated ESD protection, it is an excellent choice for designers requiring a reliable and robust solution.
The specific data is subject to PDF, and the above content is for reference
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DMN3020UTS-13 Datasheet/PDF