DMN3009SFGQ-7 Allicdata Electronics
Allicdata Part #:

DMN3009SFGQ-7DITR-ND

Manufacturer Part#:

DMN3009SFGQ-7

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30VPOWERDI3333-8
More Detail: N-Channel 30V 16A (Ta), 45A (Tc) 900mW (Ta) Surfac...
DataSheet: DMN3009SFGQ-7 datasheetDMN3009SFGQ-7 Datasheet/PDF
Quantity: 2000
1 +: $ 0.25600
10 +: $ 0.24832
100 +: $ 0.24320
1000 +: $ 0.23808
10000 +: $ 0.23040
Stock 2000Can Ship Immediately
$ 0.26
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 900mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2nF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN3009SFGQ-7 is a n-channel logic level MOSFET commonly used in many different electronic applications. This MOSFET is packaged in a TSSOP-8 style of package, with a maximum drain current of 22 A and is capable of operating at a maximum voltage of 55V. The DMN3009SFGQ-7 is a popular choice for many projects due to its high current and low-voltage operation.

The DMN3009SFGQ-7 is a metal-oxide semiconductor field-effect transistor (MOSFET). It is a three-terminal device consisting of a source, a drain, and a gate which are all insulated from each other and the substrate by a thin layer of insulating material. It operates by using the voltage applied to the gate with respect to the source to drive the current through the drain and the source.The current, or charge, flowing between these two terminals is controlled by the potential of the gate. This makes the device act as a switch, allowing current to flow through the drain and source when the voltage of the gate is greater than, or equal to, a certain threshold value.

The DMN3009SFGQ-7 is a logic level MOSFET, which means it operates at the voltages used for logic circuits. This type of MOSFET is capable of operating at much lower currents and voltages than traditional high power MOSFETs, allowing it to be used in many low-power applications. This makes the DMN3009SFGQ-7 ideal for use in low-voltage and low-current applications such as on-off switches, motor drivers, and voltage regulators.

The DMN3009SFGQ-7 is also a good choice for many projects that require a high current capacity. Its 22A maximum drain current rating means it can be used in a wide range of applications such as switching power supplies, DC-DC converters, and motor control circuits. It is also capable of operating at a maximum voltage of 55V, which makes it suitable for use in applications that require a high voltage.

One of the advantages of the DMN3009SFGQ-7 over other types of MOSFETs is its very low on-resistance (RDS(on)). This allows it to operate efficiently, with little power wasted as heat, making it a great choice for low-power applications. The DMN3009SFGQ-7 is also a low-cost option compared to other types of MOSFETs, which makes it an attractive choice for many projects.

In conclusion, the DMN3009SFGQ-7 is a versatile and cost-effective MOSFET that can be used in many different types of applications. Its logic level operation and high current capacity make it a great choice for low-power and high-voltage applications. Its low on-resistance also makes it an efficient choice for low-power applications, and its low cost makes it a viable option for many projects. All in all, the DMN3009SFGQ-7 is a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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