| Allicdata Part #: | DMN3027LFG-13DI-ND |
| Manufacturer Part#: |
DMN3027LFG-13 |
| Price: | $ 0.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 30V POWERDI3333-8 |
| More Detail: | N-Channel 30V 5.3A (Ta) 1W (Ta) Surface Mount Powe... |
| DataSheet: | DMN3027LFG-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.22000 |
| 10 +: | $ 0.21340 |
| 100 +: | $ 0.20900 |
| 1000 +: | $ 0.20460 |
| 10000 +: | $ 0.19800 |
| Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | PowerDI3333-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 15V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 18.6 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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DMN3027LFG-13 Application Field and Working Principle
The DMN3027LFG-13 is a three-terminal N-channel enhancement-mode MOSFET. It is a device that belongs to the n-channel MOSFET family, which is commonly used in the field of MOSFET transistors. The DMN3027LFG-13 is designed specifically for use in various high frequency switching circuit applications such as high performance DC-DC buck converters. It is ideal for a variety of applications due to its low operating voltage, high switching frequency, and exceptional thermal performance.
In operation, the DMN3027LFG-13 is used to control the flow of electrical current between the drain and the source. It works by controlling the gate voltage, which in turn controls the channel resistance between the drain and the source. A higher gate voltage will create a lower resistance, while a lower gate voltage will create a higher resistance. This ability to control the current flow by simply adjusting the gate voltage is one of the key advantages of the DMN3027LFG-13.
The DMN3027LFG-13 is designed for ultra-low gate charge and superior switching performance. It features an ultra-low maximum gate charge of only 13nC and a minimum on-state resistance of 29mΩ. It also features a maximum drain current rating of up to 36A and a maximum of 500V drain-to-source voltage. In addition, it is built with a low thermal resistance junction-to-ambient that allows for effective thermal management in high-power circuits.
The DMN3027LFG-13 is built with an insulated gate construction which allows it to be used in a wide variety of applications. It can be used in electronic switching systems such as power distribution, appliance control, DC-DC converters, motor speed controls, and lighting control. The DMN3027LFG-13 is also capable of being used in a number of industrial applications including relays, solenoid control, and automotive systems.
Conclusion
The DMN3027LFG-13 is a three-terminal N-channel enhancement-mode MOSFET that is designed for ultra-low gate charge and superior switch performance. It features an ultra-low maximum gate charge of 13nC and a minimum on-state resistance of 29mΩ. It also features a maximum drain current rating of up to 36A and a maximum of 500V drain-to-source voltage. The DMN3027LFG-13 is designed for use in various high frequency switching circuit applications such as high performance DC-DC buck converters and is capable of being used in a wide variety of applications in the field of MOSFET transistors.
The specific data is subject to PDF, and the above content is for reference
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DMN3027LFG-13 Datasheet/PDF