| Allicdata Part #: | DMN3026LVT-7DITR-ND |
| Manufacturer Part#: |
DMN3026LVT-7 |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 30V 6.6A 6-SOT26 |
| More Detail: | N-Channel 30V 6.6A (Ta) 1.2W (Ta) Surface Mount TS... |
| DataSheet: | DMN3026LVT-7 Datasheet/PDF |
| Quantity: | 3000 |
| 1 +: | $ 0.04800 |
| 10 +: | $ 0.04656 |
| 100 +: | $ 0.04560 |
| 1000 +: | $ 0.04464 |
| 10000 +: | $ 0.04320 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | TSOT-26 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 643pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 6.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.6A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMN3026LVT-7 is an advanced MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is specifically designed for applications such as power switching, low-side power management, and power conversion circuits. As a single MOSFET, the DMN3026LVT-7 offers a wide range of benefits including a low-voltage drop across the drain-source junction, fast switching performance, and enhanced immunity to electrical noise.
The low voltage drop offered by the DMN3026LVT-7 is the leading benefit of using the device, as it significantly reduces losses in power conversion circuits. This is achieved by the high level of electrical conduction that is possible due to the device\'s low on-state resistance—as low as 0.0014 Ω at a drain-source voltage of 10V. This makes the device suitable for a variety of power switching applications, where the electrical noise that can be generated as a result of poor conduction must be minimized.
The DMN3026LVT-7 also offers fast switching performance with a fast-switching threshold of 3V. This is an ideal feature for applications such as motor control and power switching circuits, where fast response times are essential. Additionally, the device is highly stable in all operating conditions due to its high, inherently safe body diode and its low input capacitance.
In terms of electrical noise immunity, the DMN3026LVT-7 has a low threshold gate capacitance, meaning that it can easily withstand high levels of electrical noise without being affected. This is due to the device\'s built-in ESD (Electrostatic Discharge) protection, which is integral to its high level of noise immunity. Additionally, the device has an extremely high stability in all environmental conditions, making it suitable for applications that require reliable performance over long periods of time.
The DMN3026LVT-7 is thus an ideal component for a variety of power switching and motor control applications, as it can provide efficient power management, fast switching performance, and enhanced immunity to electrical noise for electronic designs. Furthermore, the device has a relatively small size, making it suitable for space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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DMN3026LVT-7 Datasheet/PDF