DMN3033LSD-13

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The DMN3033LSD-13 is a N-channel Array Enhancement mode Field Effect Transistor (FET). This FET array is an integrated circuit (IC) that contains multiple FETs connected in parallel within the same package, allowing the same operating voltage (Vds) to be used across each. The DMN3033LSD-13 is optimized for high-side and mid-side gate drive applications where the FET is required to switch high current loads in a highly efficient and reliable manner.

An array FET such as the DMN3033LSD-13 can be used in a number of applications including motor control, lighting control, power supplies, switching regulators and anything that requires a switch to control the flow of current. It is also commonly used in audio amplifiers and in high power switching.

The DMN3033LSD-13 works on the principle of an insulated gate field-effect transistor (IGFET), which is also known as a MOSFET (metal oxide semiconductor field effect transistor). The device has a pair of insulated gate electrodes, one of which is connected to the drain electrode and the other to the source electrode. When a voltage is applied to the gate, a depletion region is created in the semiconductor material between the drain and source electrodes. This region can conduct current or can act as an insulator depending on the amount of voltage on the gate. When the voltage exceeds the threshold voltage, current can flow between the source and drain, allowing for the external control of current.

The DMN3033LSD-13 has a maximum drain-source voltage of 30V and a maximum on-state drain current of 3.0A. It also has a low gate-threshold voltage, allowing for very low gate drive voltages and a fast switching time. It operates with a wide range of temperatures from -55 to 150°C and has a low on-resistance (Rds) of 33mΩ, making it ideal for power conversion and control applications.

The DMN3033LSD-13 is a very efficient and reliable FET array which can be used in a variety of applications, ranging from motor control to audio amplification. Its low on-resistance and wide operating temperature range make it suitable for high-current, high-side, mid-side and low-side applications, while its fast switching time ensures minimal power losses. In addition, the array’s low gate-threshold voltage allows it to be driven using very low gate drive voltages, making it an ideal solution for power conversion and control applications.

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