DMN3035LWN-7

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The DMN3035LWN-7 is a high-performance n-channel, pass-gate field effect transistor array designed specifically for applications where high-voltage operation is required with minimal power dissipation. It is the perfect component for a variety of industries and applications, from high-end consumer electronics to industrial machinery.

Basically, the DMN3035LWN-7 is an integrated circuit array of multiple high-voltage, low-power MOSFET transistors, bonded together in a single package or substrate. Each individual transistor possesses two gate terminals with a separate current-regulating input terminal, also referred to as a ‘gate-control input’. When the gate-control input is activated, the main conductive path between the source and drain is biased, allowing current flow between them so that either the source or drain is connected to the gate-control input.

The DMN3035LWN-7 is designed to regulate current between the source lead and drain lead of the MOSFET transistors in order to direct power to specific devices and control it accordingly. This makes it ideal for use in applications requiring devices to commutate large currents with minimal power dissipation. Such applications include motorised light fixtures, power amplifiers, power converters, and HVAC systems.

The DMN3035LWN-7 works with N-channel MOSFETs, offering a high-speed switching of switching frequencies up to 200MHz. The device is particularly well-suited for low-voltage applications with less than 12V operating voltages and low-current leakage with thresholds down to 200µA. The circuit offers adjustable gate-threshold voltages as well as adjustable gate-to-source resistance, which makes it an ideal choice for high-voltage, low-power applications.

The DMN3035LWN-7 is available in an array of sizes and numbers of transistors, allowing for custom solutions for specific applications. The device also boasts of excellent electrical characteristics, enabling reliable performance even in challenging applications. This makes the DMN3035LWN-7 a great choice for both industrial and consumer applications.

In conclusion, the DMN3035LWN-7 provides a complete solution for high-voltage, low-power applications as it combines multiple individual high-voltage, low-power MOSFET transistors into a single package. Its advantages include high-speed switching with minimal power dissipation, adjustable gate-threshold voltage, adjustable gate-to-source resistance, and several size and transistor options for custom solutions. Thanks to its excellent electrical characteristics and customizability, the DMN3035LWN-7 is a great choice for high-voltage, low-power applications.

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