DMN3190LDW-13 Allicdata Electronics
Allicdata Part #:

DMN3190LDW-13DITR-ND

Manufacturer Part#:

DMN3190LDW-13

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 30V 1A SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surfa...
DataSheet: DMN3190LDW-13 datasheetDMN3190LDW-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.04637
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The DMN3190LDW-13 is an advanced high voltage n-channel array transistor. This type of transistor is commonly used for power management, providing variable power and control to a device or circuit. It is part of a large family of transistors. The DMN3190LDW-13 is ideal for applications where variable power is required and it operates in a wide variety of conditions.The DMN3190LDW-13 belongs to a family of array transistors known as FETs (Field Effect Transistors). FETs are used to switch electronic signals. FETs are also known as MOSFETs or Metal Oxide Semiconductor FETs. This type of transistor is often used in applications where low electric power is required and where uniform output is important.The DMN3190LDW-13 is a high voltage n-channel array transistor which makes it suitable for use in many applications where high power is required. It is capable of handling high currents up to 600 volts and with a voltage breakdown of up to 180 volts. This makes it suitable for high power circuits such as automotive, power supplies, industrial controls and other high power applications.The DMN3190LDW-13 is also designed with an integrated gate voltage detector, which allows the device to detect minor changes in the gate voltage. This feature allows the DMN3190LDW-13 to accurately control the flow of current and ensure that the circuit remains stable.The DMN3190LDW-13 also features a special clamping circuit which helps to maintain a stable voltage when there is a large leakage current. This feature helps to protect the transistor from damage due to high currents.The DMN3190LDW-13 is also configured with two temperature sensing elements which allow it to detect changes in the surrounding environment. This feature helps to maintain a perfect temperature balance.The DMN3190LDW-13 is a high voltage n-channel array transistor, which makes it suitable for use in a wide range of applications. Its robust design, multiple features, and high power handling capacity make it the ideal choice for power management needs. It can be used in a variety of applications, including automotive, industrial, power supplies and other high power applications.

The specific data is subject to PDF, and the above content is for reference

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