DMN32D2LDF-7 Allicdata Electronics
Allicdata Part #:

DMN32D2LDF-7DITR-ND

Manufacturer Part#:

DMN32D2LDF-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 30V 0.4A SOT353
More Detail: Mosfet Array 2 N-Channel (Dual) Common Source 30V ...
DataSheet: DMN32D2LDF-7 datasheetDMN32D2LDF-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Power - Max: 280mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SOT-353
Description

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The DMN32D2LDF-7 is a transistor array with two complementary totem poles consisting of two double PMOS transistors with source-drain diodes and two double NMOS transistors with source-drain diodes. It was first introduced in 2000 by its manufacturer, Vishay Intertechnology. The DMN32D2LDF-7 array is designed for general-purpose logic applications where the logic level can more easily be controlled by the user.

The DMN32D2LDF-7 features a -7V to +7V supply voltage range with a maximum junction temperature of 175°C. It also features a low current flow at the same supply voltage, thus making it suitable for low power applications. The device has a maximum on-state resistance of 1.5ohm and a maximum drain-source resistance of 3.5ohm, both characteristics of which make it suitable for power applications. Additionally, the device has a low leakage current of 2.5mA, which makes it well suited to battery operated systems. The device is available in a dual flat no leads (DFN) package, making it well suited for surface mounted applications.

Similar to the other CMOS logic gate arrays, the working principle of the DMN32D2LDF-7 is based on the use of complementary MOS transistors (CMOS), which consists of two PMOS and two NMOS transistors. In operation, the PMOS and NMOS transistors of the DMN32D2LDF-7 are switched between the high and low logic states when current flows through them. In the high logic state, the PMOS transistor is turned on and the NMOS transistor is turned off. This creates a low voltage drop between the drain and source of the transistor and can be considered the ‘on’ state. Meanwhile, in the low logic state, the NMOS transistor is turned on and the PMOS transistor is turned off. This creates a high voltage drop between the drain and source of the transistor and can be considered the ‘off’ state.

The DMN32D2LDF-7 array has a wide range of applications, from automotive systems to handheld devices. Some of the more popular applications include power regulators and logic gates, motor drives and controllers, industrial automation, audio systems, and gaming consoles. The device is particularly suitable for low power, battery operated systems due to its low leakage current. The device is also ideal for applications that require a low on-state resistance, due to its low 1.5ohm resistance. Additionally, the device is well suited for surface mounted applications due to its small, DFN package.

In summary, the DMN32D2LDF-7 is a transistor array with two complementary totem poles consisting of two double PMOS transistors with source-drain diodes, two double NMOS transistors with source-drain diodes, and a -7V to +7V supply voltage range. It is suitable for general-purpose logic applications and is particularly well suited for low power, battery operated systems. The device’s low on-state resistance and small DFN package make it well suited for power applications and surface mounted applications. The wide range of applications from automotive systems to handheld devices make the DMN32D2LDF-7 an ideal choice for a variety of projects and applications.

The specific data is subject to PDF, and the above content is for reference

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