Allicdata Part #: | DMN5010VAK-7DITR-ND |
Manufacturer Part#: |
DMN5010VAK-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 50V 0.28A SOT-563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 50V 280mA 250mW Su... |
DataSheet: | DMN5010VAK-7 Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 280mA |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Power - Max: | 250mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMN5010VAK-7 device is a N-Channel enhancement mode MOSFET array, featuring four independent 600V MOSFETs with a single Gate terminal per FET and a common Drain terminal. This device is a great option for designers looking to utilize N-Channel MOSFET technology in their power switching design.
The DMN5010VAK-7’s integrated circuit has a maximum Drain-to-Source voltage rating of 600V, which allows it to handle medium to high voltage applications. It also has a high current buck capability of up to 70A and low on-resistance value of 0.4 ohms. This device’s low on-resistance allow for lower power dissipation in the circuit, further making it suited for efficient power switching design.
The DMN5010VAK-7 is based on the MOSFET concept of field-effect transistors. It is essentially a metal-oxide-semiconductor (MOS) gate tailored to the purpose of rapidly switching between low voltages in a power supply. It works by affecting an electric charge through a depletion zone while the drain-source path is enabled within the device. The metal-oxide-semiconductor creates an electrostatic field, which is comprised of mobile free electrons that can flow in and out of the metal-oxide surface layer. This is known as the gate.
The DMN5010VAK-7 array device comes in a surface mountable package, very conventional by FETs array style. The on resistance is not stated as a figure, more as a variation across the array. This makes it excellent for use in applications such as audio equipment, power supplies, motor drives, automotive, and portable devices.
The DMN5010VAK-7 is a great choice for switching low voltages in a variety of power applications. Its single Gate control for multiple FETs and low on-resistance makes it ideal for efficient power switching designs. Its high voltage rating and high current capability also make it suitable for applications that require high-power electronics.
The DMN5010VAK-7 is an exceptionally reliable and efficient power solution for a myriad of applications. It can handle a wide range of voltages and current, while its low on-resistance ensures efficient power switching. Applications such as audio equipment, power supplies, motor drives, automotive, and portable devices can all benefit from this device.
The specific data is subject to PDF, and the above content is for reference
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