DMN53D0LQ-13 Allicdata Electronics
Allicdata Part #:

DMN53D0LQ-13-ND

Manufacturer Part#:

DMN53D0LQ-13

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NCH 50V 500MA SOT23
More Detail: N-Channel 50V 500mA (Ta) 370mW (Ta) Surface Mount ...
DataSheet: DMN53D0LQ-13 datasheetDMN53D0LQ-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03387
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
FET Feature: --
Power Dissipation (Max): 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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DMN53D0LQ-13 Application Field and Working Principle

DMN53D0LQ-13 is a single N-Channel enhancement mode MOSFET manufactured by Diodes Incorporated. It combines advanced processing techniques with high-voltage and low-on resistance. This MOSFET is used in various applications such as motor and lighting control, switching, sensorless motor control, and DC/DC step-down applications. It can work over a wide range of temperature, from -40°C to 175°C.

The working principle of DMN53D0LQ-13 is based on the MOSFET technology. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, which is a type of transistor that uses electrical charge to control the flow of current. The MOSFET structure is composed of four layers: a gate, an oxide layer, and two “source” and “drain” electrodes. By applying a voltage to the gate terminal, the electrons in the oxide layer will be repulsed and allow current to flow through the two electrodes.

When the MOSFET is used in the DMN53D0LQ-13, the gate voltage is the main parameter for controlling the output. When the gate voltage is high, the current flowing through the channels is high and thus the output will be high. When the gate voltage is low, the current flowing through the channels is low, and thus the output will be low. This is the core of the MOSFET application in the DMN53D0LQ-13.

The DMN53D0LQ-13 MOSFET also features a low on-resistance of 4.4 mΩ max. This is an important feature when considering the efficiency of the device in applications such as motor and lighting control, or sensorless motor control. The low on-resistance helps to reduce the amount of heat generated, thus reducing the power consumption of these applications.

In addition to the low on-resistance, the DMN53D0LQ-13 also features a wide temperature range of working. This is an important feature when considering its application in harsh environments such as automotive or industrial applications. It also features a wide range of input voltage of 4.5V to 20V and a maximum drain current of 16A.

The DMN53D0LQ-13 is an excellent choice for applications such as motor and lighting control, switching, sensorless motor control, and DC/DC step-down applications. It combines low on-resistance with a wide temperature range, making it a reliable and efficient solution for these applications.

The specific data is subject to PDF, and the above content is for reference

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