Allicdata Part #: | DMN5L06T-7-ND |
Manufacturer Part#: |
DMN5L06T-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 50V 280MA SOT-523 |
More Detail: | N-Channel 50V 280mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | DMN5L06T-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 280mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 2.7V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 200mA, 2.7V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
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The DMN5L06T-7 is a type of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The DMN5L06T-7 MOSFET is an enhancement type MOSFET, which uses an electric field and a dielectric (insulating) material between the gate and the source to control the flow of charge carriers through the MOSFET. This type of MOSFET can be used in most applications that require high-speed switching, such as switch-mode power supplies, motor controllers, and battery charging systems.
DMN5L06T-7 MOSFETs are also well suited for use as drivers for high-current loads. They are also suitable for use as RTD (resistance temperature detector) drivers, light emitting diode (LED) drivers, and as variable capacitance transistors used for analog signal processing. These MOSFETs are excellent for use in low-noise, high-speed switching applications.
The DMN5L06T-7 MOSFET is a single MOSFET with an N-channel. The N-channel MOSFET has three terminals: a gate, source and drain. The N-channel MOSFET is turned on when the voltage on the gate is higher than the voltage on the source. When the voltage on the gate is lower than the source voltage, the MOSFET is turned off. The DMN5L06T-7 is designed to handle currents up to 15 A. The MOSFET has a gate capacitance of 10-15 pF, an on-resistance of 15 mΩ and a breakdown voltage of 30 V.
The working principle of a MOSFET is based on its channel. When a voltage is applied to the gate, a channel is formed in the semiconductor between the source and the drain. This channel allows the current to flow through the MOSFET. The current through the channel is controlled by the voltage applied to the gate. When the gate voltage is increased, the channel allows more current to flow. When the gate voltage is decreased, the amount of current that can flow through the MOSFET is reduced. The MOSFET acts like a variable resistor in this case.
The DMN5L06T-7 MOSFET is an excellent choice for applications requiring high speed, low noise and high efficiency. It can be used for applications such as motor control, switch mode power supplies, battery charging systems and RTD drivers. The DMN5L06T-7 MOSFET is well suited for driving high current loads, and provides excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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