Allicdata Part #: | DMN5L06TKDITR-ND |
Manufacturer Part#: |
DMN5L06TK-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 50V 280MA SOT-523 |
More Detail: | N-Channel 50V 280mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | DMN5L06TK-7 Datasheet/PDF |
Quantity: | 87000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 280mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 5V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
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DMN5L06TK-7 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single, low-voltage, P-channel device with excellent power handling characteristics and low on-resistance. The device is designed for use in a variety of applications, ranging from power supply and power efficiency related applications to automotive and industrial applications. It is specifically designed to withstand high currents and is ideal for applications where low conduction losses and high frequency switching are necessary.
A MOSFET is a type of field-effect transistor (FET) that uses a metal-oxide semiconductor as its gate material. It is a solid state electronic component that has three terminals and is used in many applications due to its excellent power handling capabilities and low on-resistance. A major advantage of the MOSFET is that it requires relatively low gate drive power relative to other transistors. This is due to its insulated gate structure and low on resistance when compared to a BJT.
The DMN5L06TK-7 is an enhancement-type MOSFET, meaning that it requires the gate voltage to be more positive than the source in order to allow current flow through the device. In this operating state, it acts as a switch, allowing current to pass through the device when the gate is properly biased. In the “off” state, the reverse bias voltage on the gate prevents current from flowing through the device. This makes the MOSFET ideal for applications that require a switch to quickly and efficiently turn on and off power. The DMN5L06TK-7 has an on-resistance of 1.2 ohms, enabling it to achieve low conduction losses when in its “on” state.
In terms of its power handling capabilities, the DMN5L06TK-7 can handle up to 30A of continuous current and up to 100A of pulsed current. This makes it ideal for applications requiring high current such as motor control and power supply efficiency. The low on-resistance of the device also means that it can be used to reduce conduction losses and increase power efficiency by allowing power to switch on quickly and evenly across the device.
The DMN5L06TK-7 is suitable for use in a variety of applications, including in the automotive and industrial sectors. The MOSFET is often used in battery charging systems due to its high power handling capabilities, enabling batteries to be charged quickly and efficiently with minimal power losses. It is also used in motor control systems, as its low on-resistance makes it ideal for applications requiring high frequency switching with minimal losses.
In conclusion, the DMN5L06TK-7 is a single, low-voltage, P-channel MOSFET that has excellent power handling characteristics and low on-resistance. It is ideal for applications requiring high current, high frequency switching, and reduced conduction losses. The device is suitable for use in a variety of automotive and industrial applications, including battery charging systems and motor control systems.
The specific data is subject to PDF, and the above content is for reference
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