Allicdata Part #: | DMN53D0LQ-7DITR-ND |
Manufacturer Part#: |
DMN53D0LQ-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 50V 0.5A SOT23 |
More Detail: | N-Channel 50V 500mA (Ta) 370mW (Ta) Surface Mount ... |
DataSheet: | DMN53D0LQ-7 Datasheet/PDF |
Quantity: | 15000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 46pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 370mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The DMN53D0LQ-7 is a single N-Channel Enhancement Mode MOSFET made with the latest advancements in technology. It is an insulated gate type Field Effect Transistor that provides an easy on-off control for high power devices. The DMN53D0LQ-7 is usually used for applications demanding high frequency operation and high performance such as power supplies and switching applications.
To understand the working principles of the DMN53D0LQ-7, we need to understand the basic structure of MOSFETs. A MOSFET consists of a source and a drain terminal separated by a semiconductor channel upon which a Gate is placed. When a positive voltage is applied to the Gate, it creates an electric field in the semiconductor channel in between the source and the drain. If the voltage is high enough, it creates a strong enough field to induce current between the source and drain terminals, thereby providing an easy on-off control for high power devices.
The DMN53D0LQ-7 is an N-Channel Enhancement mode MOSFET. This means that it requires a positive voltage to be applied to the Gate in order to operate. The DMN53D0LQ-7 can handle voltages up to 32V and currents up to 7A making it suitable for high power devices. It has a low on-resistance of 4.43 Ω which helps keep the power losses to a minimum and its maximum drain source breakdown voltage is 60V. As far as performance is concerned, the DMN53D0LQ-7 has a high switching speed of 63ns and a high maximum Gate to Source voltage of +/-12V. These features make the DMN53D0LQ-7 suitable for high frequency switching applications.
The DMN53D0LQ-7 is an ideal choice for switching applications which require high performance and high frequency operation. It is suitable for use in power supplies, motor control circuits, and high voltage drivers. In addition, its low on-resistance and high breakdown voltage make it ideal for high power devices and applications.
The specific data is subject to PDF, and the above content is for reference
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